Integrated Magnetic Field Detector for Current Sensing
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Solution Overview
Problem
Interconnect failures in semiconductor devices, primarily due to thermally induced mechanical fatigue, pose a significant reliability issue, and existing current sensing technologies are bulky, expensive, and have limited bandwidth, hindering integration in modern semiconductor devices.
Innovation Solution
A device incorporating a magnetic field detector positioned near a loop-shaped interconnect to detect current flowing through it, utilizing a giant magnetoresistive (GMR) detector for high-bandwidth current and temperature measurements, with a serpentine configuration for enhanced sensitivity and resistance to temperature variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional current sensors (e.g., LEM sensors) are used, then current sensing capability is provided, but device area increases, cost increases, and bandwidth is limited
Solution Approach 1:
The patent replaces conventional mechanical current sensors with a magnetic field detector that utilizes the Hall effect to detect magnetic fields generated by current flow in the interconnect. This substitution eliminates the need for bulky external sensors and enables direct integration at the interconnect level, significantly reducing device area while maintaining measurement capability
Solution Approach 2:
The magnetic field detector is integrated directly at the interconnect level, nesting the sensing function within the existing interconnect structure. This allows the current sensing capability to be embedded within the power delivery path itself, eliminating separate sensor components and reducing overall device footprint
2Measurement precision
If conventional current sensors (e.g., LEM sensors) are used, then current sensing capability is provided, but device cost increases
Solution Approach 1:
The interconnect structure serves dual functions: power delivery and current sensing. The same interconnect that carries current also generates the magnetic field used for sensing, eliminating the need for separate sensing components and reducing overall device cost
Solution Approach 2:
The patent replaces expensive conventional current sensors with a magnetic field detector based on the Hall effect, which can be implemented using standard semiconductor fabrication processes. This substitution significantly reduces component cost while enabling current sensing functionality
3Measurement precision
If conventional current sensors (e.g., LEM sensors) are used, then current sensing capability is provided, but bandwidth is limited
Solution Approach 1:
The patent replaces bandwidth-limited conventional sensors with a magnetic field detector that operates on electromagnetic principles. The Hall effect detector can respond to rapid changes in magnetic field, enabling high-bandwidth current sensing that captures fast transient events
4Reliability
If interconnects are made more robust to prevent thermal fatigue failures, then reliability improves, but parasitic inductance increases
Solution Approach 1:
The patent applies different design optimizations to different parts of the interconnect system. The interconnect geometry is optimized locally to balance mechanical reliability (resistance to thermal fatigue) with electrical performance (minimizing parasitic inductance). This may involve varying cross-sectional dimensions or material properties at specific locations along the interconnect
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a compact, high-bandwidth current sensing capability with improved reliability and integration potential, reducing interconnect failures and enhancing semiconductor device performance.
Implementation Method 1
The magnetic field detector is located in proximity to the loop of the interconnect. The magnetic field detector is located to detect a current flowing in the interconnect when the current flows in the interconnect.
Implementation Method 2
utilizing a giant magnetoresistive (GMR) detector for high-bandwidth current and temperature measurements
Data Source
AI summary
A device is provided. The device may include a first electrical connector, a second electrical connector, an interconnect, and a magnetic field detector. The interconnect is mounted in electrical contact with the first electrical connector and the second electrical connector and includes a loop. The magnetic field detector is located in proximity to the loop of the interconnect. The magnetic field detector is located to detect a current flowing in the interconnect when the current flows in the interconnect.