Magnetic Field Effect Transistor Using Spin Transfer Torque
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Solution Overview
Problem
Prior field effect transistors (FETs) require electric field charging, limiting high-speed operation and necessitating external power for storing calculation results, leading to inefficiencies in data transfer and memory requirements.
Innovation Solution
A magnetic field effect transistor (FET) utilizing a current control part and a magnetic field applying part, where currents are controlled by externally applied magnetic fields, eliminating the need for charging time and allowing storage of calculation results without an external power supply, using a magnetic tunnel junction structure and spin transfer torque for high integration and miniaturization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If electric field charging is used to control current in prior FETs, then current control is achieved, but charging time is required which limits high-speed operation
Solution Approach 1:
The patent replaces the electric field-based control mechanism with a magnetic field-based control mechanism. Specifically, a magnetic field applying part (including ferromagnetic layers) generates magnetic fields to control current flow through the current flowing material region, eliminating the need for electric field charging and discharging operations that limited previous FET speed performance
Solution Approach 2:
The patent changes the fundamental control parameter from electric field voltage to magnetic field strength. By using magnetic fields generated through magnetization states in ferromagnetic layers, the device achieves current control without requiring the time-consuming charging and discharging of gate capacitances, thereby enabling high-speed operation
2Reliability
If prior FETs are used to store calculation results, then external power supply is required to maintain data, but this increases power consumption and requires additional memory components
Solution Approach 1:
The magnetic field effect transistor achieves self-service functionality by integrating both switching and memory capabilities within a single device structure. The magnetic tunnel junction structure maintains its magnetization state (representing stored data) without requiring external power supply, eliminating the need for separate memory components and reducing overall system power consumption
3Reliability
If magnetic tunnel junction structure is used for storing calculation results, then non-volatile storage is achieved, but device complexity increases
Solution Approach 1:
The patent merges the switching function and memory function into a single integrated device structure. The magnetic tunnel junction is combined with the current control part to form a unified magnetic field effect transistor that simultaneously performs logic switching and non-volatile data storage, reducing overall device complexity despite the advanced materials used
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-speed operation without charging time, stores calculation results without external power, and achieves high integration and miniaturization of magnetic field effect transistors, with a significant on/off current ratio, facilitating non-volatile switching and reducing memory transfer delays.
Implementation Method 1
a magnetic field applying part applying a magnetic field generated from a magnetization state, which changes according to external input
Implementation Method 2
a magnetic field applying part applying a magnetic field generated from a magnetization state, which changes according to external input
Implementation Method 3
external input may be a current applying input between ferromagnetic materials. According to this configuration, by using spin transfer torque, a magnetic field effect transistor may be further highly integrated
Data Source
AI summary
A magnetic field effect transistor is presented. A magnetic field effect transistor comprises a current control part and a magnetic field applying part. A current control part comprises multiple electrodes and a current flowing material region located between multiple electrodes and in which the amount of current flowing between the electrodes is changed, and a magnetic field applying part applying a magnetic field generating from a magnetization state, which changes according to external input, of a pre-set material. By controlling current by using magnetic fields, high speed operation is possible as charging time is not required, and calculation results may be stored without external power supply because magnetic field is supplied by altering magnetization state of a material according to external input.