Magnetic Memory Free Layer Doping for Low Power
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Solution Overview
Problem
Magnetic memory devices face challenges in achieving low power consumption and maintaining excellent magnetic tunnel junction characteristics while meeting the demands for high-speed and non-volatile performance.
Innovation Solution
Incorporating a free layer with a perpendicular magnetic material doped with non-magnetic impurities, such as transition metals or rare-earth elements, which are strategically located in interstitial sites of the crystal lattice, allowing for a magnetization direction tilted at an acute angle and increasing the spin-orbit interaction, thereby enhancing the magnetic tunnel junction characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a conventional free layer without non-magnetic impurities is used, then the magnetic memory device can be manufactured with simpler processes, but the power consumption is high and the magnetic tunnel junction characteristics are not optimal
Solution Approach 1:
The patent changes the chemical composition parameters of the free layer by introducing non-magnetic impurities (transition metals or rare-earth elements) with specific atomic numbers and concentrations. This parameter change modifies the magnetic properties and spin-orbit interaction, resulting in reduced power consumption while maintaining manufacturability through controlled doping processes
Solution Approach 2:
The patent creates a composite free layer by combining perpendicular magnetic material with non-magnetic impurity elements. This composite structure leverages the magnetic properties of the base material while the impurities provide enhanced spin-orbit coupling, achieving low power consumption without compromising manufacturing feasibility
2Reliability
If the free layer has a perpendicular magnetization direction, then the magnetic tunnel junction characteristics are improved, but the switching current density remains high
Solution Approach 1:
The patent introduces non-magnetic impurities with specific spin-orbit coupling constants (≥250 cm⁻¹) into the perpendicular magnetization free layer. This parameter change enhances the spin-orbit interaction, which reduces the switching current density while preserving the beneficial perpendicular magnetic tunnel junction characteristics
Solution Approach 2:
The non-magnetic impurity elements act as intermediaries that mediate between the perpendicular magnetization direction and the spin transfer torque mechanism. These impurities facilitate more efficient spin-orbit coupling, enabling lower switching current density without compromising the perpendicular magnetic tunnel junction performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in magnetic memory devices with improved low power consumption and enhanced magnetic tunnel junction performance, leading to increased efficiency and reduced switching current density due to the tilted magnetization direction and increased anisotropic magnetic field.
Implementation Method 1
spin-orbit interaction may occur between the perpendicular magnetic material and the non-magnetic impurities
Implementation Method 2
the spin-orbit interaction may be Dzyaloshinskii-Moriya interaction
Data Source
AI summary
Embodiments of the inventive concepts provide magnetic memory devices. The magnetic memory device includes a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. The free layer includes a perpendicular magnetic material doped with non-magnetic impurities.