3D Magnetic Memory With Bidirectional Gating For High Density
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Solution Overview
Problem
Current magnetic memory technologies face limitations in achieving high density, which hinders their adoption in major memory/storage markets.
Innovation Solution
The design incorporates a magnetic memory structure with paralleled conductors in multiple planes and memory elements, including a magnetic tunnel junction and a bidirectional gating device, where the bidirectional gating device is activated by threshold voltage/current to control memory states, allowing for increased density through selective operation of memory elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional magnetic memory design is used, then device simplicity is maintained, but memory density is limited
Solution Approach 1:
The patent transitions from planar 2D conductor arrangement to 3D multi-plane conductor configuration. First conductors are arranged in a first plane and second conductors are arranged in a second plane parallel to the first plane, with memory elements positioned between these planes. This three-dimensional spatial arrangement increases the number of memory elements per unit area, thereby improving memory density while maintaining manageable structural complexity through systematic layering.
Solution Approach 2:
The memory structure is divided into multiple cell layers, with each cell layer containing multiple memory elements. Each memory element is further segmented into a magnetic tunnel junction and a bidirectional gating device connected in series. This segmentation allows independent control and optimization of each memory element, enabling high-density packing while maintaining device functionality and simplifying the control of individual memory units.
2Quantity of substance
If memory density is increased through multi-plane conductors, then storage capacity improves, but control complexity increases
Solution Approach 1:
The bidirectional gating device is specifically positioned in series with the magnetic tunnel junction within each memory element. This local placement allows the gating device to independently control the current flow through its associated memory element without interfering with other memory elements. The gating device can be selectively activated by applying threshold voltage or current, enabling precise local control of individual memory elements even in high-density multi-plane configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly enhances memory density and enables efficient reading/writing operations by selectively controlling memory elements, improving performance and storage capacity.
Implementation Method 1
Due to a tunnel magnetoresistance effect, a resistance value between the fixed magnetic layer and the free magnetic layer changes with a switch in the magnetization polarity of the free magnetic layer
Implementation Method 2
the bidirectional gating device being configured to be turned on when a threshold voltage and/or a threshold current are/is applied
Data Source
AI summary
The present application provides a magnetic memory and a reading/writing method thereof. The magnetic memory includes at least one cell layer, the cell layer including: a plurality of paralleled first conductors located in a first plane; a plurality of paralleled second conductors located in a second plane, the first plane being parallel to the second plane, a projection of the second conductor on the first plane intersecting with the first conductor; a plurality of memory elements arranged between the first plane and the second plane, the memory element including a magnetic tunnel junction and a bidirectional gating device arranged in series along a direction perpendicular to the first plane, the magnetic tunnel junction being connected to the first conductor, the bidirectional gating device being connected to the second conductor, and the bidirectional gating device being configured to be turned on when a threshold voltage and/or a threshold current are/is applied.