Magnetic Memory Device Boron Gradient Conductive Member
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Solution Overview
Problem
Magnetic memory devices face challenges in maintaining stable operations due to abnormal electrical resistances caused by insufficient insulative properties of adhered materials during the patterning process, which affect manufacturing yield and device performance.
Innovation Solution
The magnetic memory device incorporates a conductive member with specific boron concentration gradients, where the second concentration of boron is lower than the first concentration, and includes metals like Hf and Ta, to control the boron distribution and maintain high insulative properties, thereby stabilizing the device's operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If adhered materials are used during the patterning process, then manufacturing yield is improved, but insulative properties deteriorate causing abnormal electrical resistances
Solution Approach 1:
The patent applies local quality by creating a boron concentration gradient within the conductive member. The boron concentration is higher at the first position (远离第一反磁性层) and lower at the second position (靠近第一反磁性层), resulting in different electrical resistance characteristics in different regions. This localized variation in material properties allows the conductive member to simultaneously achieve low overall resistance for good conductivity while maintaining sufficient insulative properties at the interface with the magnetic layers, thereby resolving the contradiction between manufacturing yield and insulative properties.
Solution Approach 2:
The patent employs parameter changes by systematically varying the boron concentration parameter throughout the conductive member. By controlling the boron concentration to decrease from the first position to the second position, the electrical resistance parameter is optimized to prevent abnormal resistance occurrences. This parameter optimization ensures that the conductive member maintains appropriate insulative properties during patterning while still providing the necessary conductive function, thus resolving the contradiction between productivity and reliability.
Data Source
AI summary
According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first counter magnetic layer is provided between the third portion and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first portion toward the second portion. The first nonmagnetic layer is provided between the first magnetic layer and the first counter magnetic layer. The third portion includes a first position, and a second position between the first position and the first counter magnetic layer in the first direction. A second concentration of boron at the second position is lower than a first concentration of boron at the first position.