Magnetic Memory Conductive Layer Width Variation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Magnetic memory devices face challenges in reducing power consumption due to high resistance and unstable operating conditions caused by varying current density and resistance across the conductive layer, which affects storage density and operational stability.
Innovation Solution
The magnetic memory device incorporates a conductive layer with specific portions of varying widths and lengths, along with nonmagnetic intermediate layers, to optimize current flow and reduce resistance, while a controller manages current operations to stabilize programming and reading processes, enhancing storage density and reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the conductive layer has uniform width and length, then the manufacturing process is simple, but the resistance varies across the layer causing unstable operating conditions
Solution Approach 1:
The conductive layer is designed with non-uniform width, where the first portion has a first width and the second portion has a second width different from the first width. This local variation in geometric quality allows different regions to have different resistance characteristics, optimizing current distribution and reducing overall resistance while maintaining manufacturing feasibility through standard photolithography processes.
2Device complexity
If the conductive layer has high resistance, then the device structure is simpler, but the power consumption increases and storage density decreases
Solution Approach 1:
The patent modifies the geometric parameters of the conductive layer by varying the width across different portions. The first portion has width W1 and the second portion has width W2, where W1 ≠ W2. This parameter change optimizes the resistance characteristics without introducing additional material layers or complex structures, thereby reducing power consumption while maintaining structural simplicity.
3Device complexity
If the conductive layer has high resistance, then the device structure is simpler, but the storage density is reduced
Solution Approach 1:
By creating regions of different widths in the conductive layer, the patent optimizes current density distribution locally. The narrower portion increases current density to enhance switching efficiency and storage density, while the overall structure remains simple without requiring additional magnetic layers or complex architectures.
4Ease of manufacture
If the current density varies across the conductive layer, then the device can be manufactured with standard processes, but the operating conditions become unstable
Solution Approach 1:
The patent intentionally introduces parameter variation (width change) in the conductive layer to compensate for the effects of current density variation. By adjusting the width parameter across different portions, the resistance is optimized to maintain stable operating conditions while remaining compatible with standard semiconductor manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves stable and efficient operations by minimizing resistance and power consumption, thereby increasing storage density and maintaining stable memory cell performance.
Implementation Method 1
a conductive layer (21), a first magnetic layer (11), a second magnetic layer (12), and a first intermediate layer (11i) The first magnetic layer (11) and the second magnetic layer (12) are separated from each other in a first direction crossing a second direction from a first portion toward a second portion of the conductive layer (21)
Implementation Method 2
a magnetic memory device includes a conductive layer (21), a first magnetic layer (11), a second magnetic layer (12), and a first intermediate layer (11i)
Data Source
AI summary
According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.