Magnetic Memory Device Contact Height Etching Control
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Solution Overview
Problem
Existing magnetic memory devices face challenges in maintaining the reliability and characteristics of magnetoresistance effect elements due to over-etching during the formation of bit lines, which can degrade the performance of memory cells.
Innovation Solution
The magnetic memory device design includes a configuration where the top surfaces of contacts are higher than the memory cells, allowing for precise control of etching in both regions, using a common patterning process for bit lines with varying conductive materials and insulating layers to prevent excessive over-etching damage to memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If over-etching is performed during bit line formation, then etching completeness is improved, but memory cell characteristics are degraded
Solution Approach 1:
The patent divides the etching process into two distinct stages: a first etching process that forms the bit line pattern, and a second etching process that forms contact holes. This segmentation allows each etching process to be independently controlled with appropriate etching conditions, preventing over-etching damage to memory cells while ensuring complete etching where needed.
Solution Approach 2:
The patent applies different etching conditions to different regions of the substrate. The first etching process uses conditions optimized for bit line formation, while the second etching process uses conditions optimized for contact hole formation. This local quality approach ensures that each region receives the appropriate etching treatment without compromising adjacent structures.
2Reliability
If different conductive materials are used for bit lines in different regions, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent employs a single patterning process that can form bit lines with different conductive materials in different regions. This multi-functional approach allows the same patterning equipment and basic process steps to create both first conductive material bit lines and second conductive material bit lines, reducing manufacturing complexity while maintaining performance benefits.
Solution Approach 2:
The patent changes material parameters (conductive material type) based on regional requirements while maintaining process parameter consistency. By using the same patterning process with adjusted material deposition or selection, the patent achieves different bit line properties in different regions without significantly increasing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures excellent characteristics and reliability of the magnetic memory device by accurately managing etching processes, reducing damage to memory cells and maintaining optimal performance of magnetoresistance effect elements.
Implementation Method 1
a magnetoresistance effect element and a switching element stacked in a third direction intersecting the first and second directions
Data Source
AI summary
According to one embodiment, a magnetic memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction, a memory cell provided between the first wiring line and the second wiring line, including a bottom surface connected to the first wiring line and a top surface connected to the second wiring line, and including a magnetoresistance effect element and a switching element stacked in a third direction, and a contact including a top surface connected to the second wiring line, the top surface of the contact being located higher than the top surface of the memory cell.