Magnetic Memory Device Crystallinity Conserving Pattern

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Solution Overview

Problem

Existing magnetic memory devices face challenges in improving the electromagnetic characteristics of magnetic tunnel junction patterns and maintaining crystal orientations without being affected by adjacent components, while also preventing damage during the formation process.

Innovation Solution

A magnetic memory device is designed with a magnetic tunnel junction pattern including a tunnel barrier and magnetic patterns, where a first crystallinity conserving pattern with a higher crystallization temperature is used, and an upper electrode is aligned vertically with this pattern. Additionally, a second crystallinity conserving pattern with a different material ratio is introduced, along with an interlayer crystallinity conserving pattern, to maintain amorphous states and control crystal orientations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a magnetic tunnel junction pattern is formed with adjacent components, then device functionality is achieved, but crystal orientations of magnetic patterns are affected by adjacent components

Engineering Contradiction:

Improveelectromagnetic characteristicVSAvoidcrystal orientation

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

An amorphous upper crystallinity conserving pattern is introduced as an intermediary layer between the magnetic patterns and adjacent components. This layer has a crystallization temperature higher than the magnetic patterns, allowing it to remain amorphous during magnetic pattern crystallization. The intermediary layer isolates the magnetic patterns from crystal orientation influence of adjacent components while maintaining electromagnetic characteristics.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If annealing is performed to crystallize magnetic patterns, then electromagnetic characteristics are improved, but adjacent components may crystallize and affect magnetic patterns

Engineering Contradiction:

Improveelectromagnetic characteristicVSAvoiddamage from adjacent component crystallization

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent utilizes parameter changes in crystallization temperature to solve the contradiction. The amorphous upper crystallinity conserving pattern is designed with a crystallization temperature higher than the magnetic patterns. During annealing, the magnetic patterns crystallize at their lower temperature while the amorphous layer remains unchanged, preventing harmful crystallization of adjacent components from affecting the magnetic patterns.

Inventive Principle:

Principle #35Parameter changes

3Stability of the object's composition

If multiple layers are added to conserve crystallinity, then crystal orientation stability is improved, but device structure becomes more complex

Engineering Contradiction:

Improvecrystal orientationVSAvoidstructure

Core Design Contradiction:

Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The upper crystallinity conserving pattern is segmented into multiple layers with different material compositions and crystallization temperatures. This segmentation allows each layer to serve specific functions in preventing crystal orientation influence while maintaining overall structural organization and controlling the complexity through functional differentiation.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the electromagnetic characteristics of the magnetic tunnel junction pattern, prevents damage during formation, and ensures that crystal orientations are determined independently of adjacent components, thereby improving the reliability of the magnetic memory device.

Implementation Method 1

The first crystallinity conserving pattern is substantially amorphous

Methodology Applied

Scientific EffectAmorphous state:

Implementation Method 2

having a crystallization temperature higher than that of the magnetic patterns

Methodology Applied

Scientific EffectCrystallization temperature difference:

Implementation Method 3

A lower magnetic pattern, a tunnel barrier pattern, and an upper magnetic pattern included in the magnetic tunnel junction pattern may be stacked in a vertical direction

Methodology Applied

Scientific EffectCrystallization: Crystallisation

Implementation Method 4

A side surface of the upper electrode may be vertically aligned with the side surface of the first crystallinity conserving pattern

Methodology Applied

Scientific EffectVertical alignment:

Data Source

PatentUS9484526B2Magnetic memory device and method for forming the same

Publication Date: 2016.11.01 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.