Magnetic Memory Logic Operation via Current Direction Control

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Solution Overview

Problem

Existing semiconductor memory devices require multiple magnetic induction layers to process multiple input values, leading to complex manufacturing processes and high current requirements due to the need for multiple current driving circuits, which complicates operation and increases power consumption.

Innovation Solution

A semiconductor memory device with a single magnetic induction layer that changes the direction of a magnetically induced current based on logical combinations of input values, using a current driving circuit and resistance-variable elements to perform logic operations and represent multiple input values, thereby reducing the number of magnetic induction layers needed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple magnetic induction layers are used to process multiple input values, then the device can handle multiple inputs, but the manufacturing process becomes complex and current requirements increase

Engineering Contradiction:
Improveability to process multiple input valuesVSAvoidmanufacturing process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent combines multiple input value processing functions into a single magnetic induction layer by using a current driving circuit that can dynamically change connection states. Instead of having separate magnetic induction layers for each input value, the invention merges them into one layer that receives processed input signals from the current driving circuit, thereby simplifying the manufacturing process while maintaining the ability to handle multiple inputs.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The single magnetic induction layer is designed to perform multiple functions by receiving different input combinations from the current driving circuit. The layer universally processes various logic operations (AND, OR, NAND, NOR, XOR, XNOR) by changing the connection state of the current driving circuit, eliminating the need for multiple specialized layers for different logic functions.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If multiple magnetic induction layers are used to process multiple input values, then the device can handle multiple inputs, but the number of current driving circuits increases and power consumption rises

Engineering Contradiction:
Improveability to process multiple input valuesVSAvoidpower consumption
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The invention merges the functionality of multiple current driving circuits into a single current driving circuit that can dynamically reconfigure its connection state. This single circuit controls the current flow through the single magnetic induction layer based on the required logic operation, significantly reducing the total power consumption compared to having separate current driving circuits for each magnetic induction layer.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The current driving circuit is designed with multi-functionality to handle various logic operations using a single magnetic induction layer. By universally processing different input combinations and logic functions through one circuit-layer system, the invention reduces the overall power consumption while maintaining the ability to process multiple input values effectively.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Adaptability or versatility

If multiple magnetic induction layers are used, then multiple input values can be processed, but the device operation becomes complicated

Engineering Contradiction:
Improveability to process multiple input valuesVSAvoiddevice operation simplicity
Core Design Contradiction:
Adaptability or versatilityVSEase of operation

Solution Approach 1:

The invention simplifies device operation by merging multiple input processing functions into a single magnetic induction layer controlled by a programmable current driving circuit. Instead of requiring complex coordination between multiple layers, the system operates by programming the connection state of the current driving circuit, which then controls the current flow through the single layer, making the operation more straightforward and less complicated.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The current driving circuit is designed to dynamically change its connection state based on the required logic operation. This dynamic reconfiguration allows the single magnetic induction layer to adapt to different input combinations and logic functions, simplifying the overall device operation by eliminating the need for static multiple-layer structures that would require complex switching and coordination.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for efficient operation at multiple modes with fewer magnetic induction layers, simplifying the manufacturing process and reducing power consumption while maintaining nonvolatile memory capabilities.

Implementation Method 1

a single magnetic induction layer that changes the direction of a magnetically induced current based on logical combinations of input values

Methodology Applied
Scientific EffectMagnetic induction: Electromagnetic Induction

Implementation Method 2

Magnetic RAMs use a giant magnetoresistive (GMR) phenomenon or a spin polarization magnetic permeation phenomenon which are generated because a spin largely affects the electron transfer phenomenon

Methodology Applied
Scientific EffectGiant magnetoresistive (GMR) phenomenon: Magnetoresistance

Implementation Method 3

The magnetic RAM is a memory device that senses current variations according to magnetization directions of ferromagnetic thin films formed in a multi-layer structure

Methodology Applied
Scientific EffectFerromagnetism: Ferromagnetism

Data Source

PatentUS7672154B2Semiconductor memory device and method of programming the same
Publication Date: 2010.03.02 SAMSUNG ELECTRONICS CO LTD
  • US7672154B2 patent drawing
  • US7672154B2 patent drawing
  • US7672154B2 patent drawing

AI summary

Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.