Magnetic Memory Device with Tapered Domain Injection for Stable Writing
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Solution Overview
Problem
Existing magnetic memory devices face challenges in performing stable and efficient writing operations on magnetic domains without the need for additional writing devices or conductive lines.
Innovation Solution
The magnetic memory device incorporates a conductive line with a magnetic track line featuring a domain injection portion and a line portion, where the domain injection portion has a tapered shape, allowing for domain formation and movement without additional conductive lines or writing devices by controlling current density through the conductive line.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional writing devices or conductive lines are used to perform writing operations on magnetic domains, then the stability and efficiency of writing operations is improved, but the device complexity and number of components increases
Solution Approach 1:
The patent merges the writing function into the existing conductive line by designing a tapered section that generates sufficient current density for domain formation and movement. This eliminates the need for separate writing devices or additional conductive lines, reducing device complexity while maintaining writing stability through the optimized tapered geometry
Solution Approach 2:
The conductive line is designed to serve multiple functions: it acts as both the current transmission path and the writing device for domain formation and movement. The tapered section of the conductive line universally performs the writing operation that would otherwise require dedicated writing equipment, simplifying the overall device structure
2Ease of operation
If additional writing devices or conductive lines are used to perform writing operations on magnetic domains, then the ease of writing operation is improved, but the device complexity increases
Solution Approach 1:
The writing operation capability is merged into the existing conductive line structure through the tapered section design. This integration maintains ease of writing operation by providing sufficient current density while avoiding the complexity of additional writing devices or control mechanisms
Solution Approach 2:
The conductive line with its tapered section serves itself as the writing device. By designing the geometry to naturally generate the required current density for domain formation and movement, the system eliminates the need for separate writing equipment, maintaining operational ease while reducing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables easy and stable writing operations on magnetic domains by forming and moving domains within the magnetic track line using controlled current density, eliminating the need for additional components, thus enhancing operational efficiency.
Implementation Method 1
The conductive line may be configured to generate a magnetic field in a third direction D3, which is perpendicular to the top surface CL_U of the conductive line CL
Data Source
AI summary
A magnetic memory device includes a conductive line extended in a first direction and a magnetic track line provided on a top surface of the conductive line and extended in the first direction. The magnetic track line includes a domain injection portion and a line portion, which is extended from the domain injection portion in the first direction. The domain injection portion has a tapered shape in an opposite direction of the first direction. The conductive line has a linewidth in a second direction, and the first and second directions are parallel to the top surface of the conductive line and are perpendicular to each other. Below the domain injection portion, a first linewidth of the conductive line remains constant in the opposite direction of the first direction.