Magnetic Memory Device Domain Wall Motion Control
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Solution Overview
Problem
Conventional shift resistor type memory devices face challenges in accurately transmitting and storing multiple digits of information due to the complexity of controlling magnetic domain walls, which affects the reliability and efficiency of data storage and retrieval.
Innovation Solution
A magnetic memory device with a laminated structure comprising alternating first and second magnetic layers, where the magnetization direction is controlled using a piezoelectric body and electrical signals to move magnetic domain walls, allowing for precise manipulation and storage of data without altering the order of bit data.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If shift resistor type memory is used to increase memory capacity by arraying memory devices, then storage capacity increases markedly, but the complexity of controlling magnetic domain walls increases and data transmission accuracy deteriorates
Solution Approach 1:
The memory device is divided into multiple magnetic layers (first magnetic layer, second magnetic layer, third magnetic layer) with distinct functions. Each layer handles specific aspects of data storage and retrieval, allowing complex memory operations to be broken down into manageable segments that can be controlled independently, thus maintaining accuracy while increasing capacity.
Solution Approach 2:
A nonmagnetic layer is introduced as an intermediary between the first magnetic layer and the second magnetic layer. This intermediate layer facilitates controlled magnetic domain wall motion and interaction between layers, enabling reliable data transmission across the multi-layer structure without direct magnetic interference, thus maintaining data accuracy in high-capacity configurations.
2Quantity of substance
If multiple digits of information are stored using shift resistor memory, then storage capacity increases, but the difficulty of correctly transmitting whole digit information increases
Solution Approach 1:
Multi-digit information is segmented across multiple magnetic layers, with each layer storing a portion of the data. The distinct layers can be addressed and controlled independently through selective current application, reducing the complexity of managing multi-digit information compared to a monolithic structure.
Solution Approach 2:
The memory device utilizes dynamic magnetic domain wall motion to encode and transmit information. By controlling the movement of domain walls through applied currents, the system can dynamically represent multiple digits of information in a controlled manner, simplifying the overall control mechanism compared to static multi-digit storage approaches.
3Adaptability or versatility
If magnetic domain walls are moved for data storage and retrieval, then memory operation flexibility increases, but the stability of magnetization direction control decreases
Solution Approach 1:
The magnetic structure is segmented into multiple layers with alternating magnetization directions. This segmentation allows domain walls to move flexibly for data operations while each layer's magnetization direction remains relatively stable due to its distinct orientation and separation from other layers.
Solution Approach 2:
The memory device employs a composite structure combining ferromagnetic layers with different magnetization characteristics and nonmagnetic spacer layers. This composite material approach enables the system to achieve both flexible domain wall motion for data manipulation and stable magnetization directions for reliable data retention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables stable and efficient movement of magnetic domain walls for reading and writing data, maintaining data integrity and increasing storage capacity by controlling the magnetization direction and domain wall position within the laminated structure.
Implementation Method 1
a piezoelectric body and a writing section, and a reading section
Implementation Method 2
method of magnetic domain wall motion
Data Source
AI summary
A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body.