Magnetic Memory Device Domain Wall Shift Register
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Solution Overview
Problem
Current magnetic memory devices with domain wall motion struggle to achieve high cell density and capacity due to limitations in using all magnetic domains as memory cells, as write and read elements are not optimally positioned, leading to data loss during cell movement.
Innovation Solution
The magnetic memory device incorporates write and read elements at both ends of a magnetic line, allowing domain walls to move logically, forming a looped shift register, enabling all magnetic domains to be used as memory cells by reading and writing information at the start position of domain wall motion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If write and read elements are positioned only at one end of the magnetic line, then the structure is simple, but not all magnetic domains can be used as memory cells leading to low cell density
Solution Approach 1:
The magnetic line is segmented into multiple magnetic domains separated by domain walls, with write and read elements positioned at both ends to access different segments. This segmentation enables all domains to be utilized as memory cells while maintaining structural organization through the domain wall partitions.
Solution Approach 2:
The write and read elements are distributed along the magnetic line in both spatial dimensions (at both ends) and temporal dimensions (through domain wall motion). This multi-dimensional arrangement allows all magnetic domains to be accessed as memory cells, increasing cell density without proportionally increasing structural complexity.
2Quantity of substance
If domain walls are moved to access target cells, then all magnetic domains can be used as memory cells, but data loss may occur during movement
Solution Approach 1:
The system performs preliminary actions by establishing stable write and read elements at both ends of the magnetic line before domain wall motion begins. This preliminary configuration ensures that data can be written and read from fixed positions while domain walls move to access target cells, preventing data loss during the movement process.
Solution Approach 2:
The magnetic memory device incorporates feedback mechanisms where the position of domain walls is monitored and controlled. The write and read elements at both ends provide feedback signals to control the domain wall motion, ensuring accurate positioning and preventing data loss during cell access operations.
3Quantity of substance
If magnetic line width is reduced to increase cell density, then more cells fit in the same space, but domain wall motion becomes more difficult
Solution Approach 1:
The magnetic line has non-uniform properties along its length, with different magnetic anisotropy and coercivity characteristics in different regions. This local quality variation allows domain walls to move more easily in certain regions while maintaining high cell density through optimized domain wall positioning and write/read element placement at both ends.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases cell density and memory capacity by ensuring all magnetic domains can be utilized as memory cells, preventing data loss during movement and enhancing storage efficiency.
Implementation Method 1
a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls
Implementation Method 2
magnetic domains partitioned by domain walls
Implementation Method 3
writing information in the target cell by using the first write element, reading out information from a first cell at the other end portion of the first magnetic line by using the first read element
Implementation Method 4
moving the domain walls by one cell by supplying an electric current to the first magnetic line
Data Source
AI summary
A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a first write element formed at one end portion of the first magnetic line, and a first read element formed at the other end portion of the first magnetic line.