Cross-Pattern Magnetic Memory Layout for Domain Wall Read/Write
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Solution Overview
Problem
Current magnetic memory devices face challenges in achieving high integration and easy mass-fabrication while maintaining high-speed read/write operations and low power consumption, particularly in utilizing the motion of magnetic domain walls effectively.
Innovation Solution
A magnetic memory device design featuring a first magnetic pattern extending in one direction with multiple second magnetic patterns intersecting and spaced apart, each comprising alternating magnetic domains and domain walls, allowing for efficient read/write operations and simplified fabrication by reducing the number of photomasks required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional magnetic memory device structures are used, then high-speed read/write operations can be achieved, but high integration and easy mass-fabrication are difficult
Solution Approach 1:
The magnetic memory device is segmented into distinct magnetic patterns (first magnetic pattern and multiple second magnetic patterns) with different magnetization directions. This segmentation allows independent control and simplification of fabrication processes, reducing the number of photomasks needed while maintaining high integration capability
Solution Approach 2:
The patent introduces vertical stacking of magnetic patterns in the third direction, creating a three-dimensional structure. This dimensional transition enables high integration without complicating the planar fabrication process, as the additional memory cells are added vertically rather than requiring complex lateral patterning
2Quantity of substance
If high integration is achieved, then memory capacity increases, but fabrication complexity increases
Solution Approach 1:
Multiple second magnetic patterns are positioned to overlap with the first magnetic pattern in the planar view, creating a nested configuration. This nesting allows multiple memory cells to share common structural elements and fabrication steps, increasing memory capacity while simplifying the overall fabrication process through pattern reuse
3Productivity
If complex magnetic patterns are used, then read/write performance improves, but power consumption increases
Solution Approach 1:
Different regions of the magnetic memory device are assigned different magnetization directions (first direction for first magnetic pattern, second direction for second magnetic patterns). This local differentiation optimizes the magnetic domain wall motion characteristics in each region, improving read/write performance while using energy efficiently by tailoring the magnetic properties to local functional requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables high integration and easy mass-fabrication of magnetic memory devices with improved read/write performance and reduced power consumption, leveraging the motion of magnetic domain walls for efficient data storage.
Implementation Method 1
new magnetic memory devices have recently been studied and developed to use motion of magnetic domain walls in magnetic materials
Data Source
AI summary
Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.