Magnetic Memory Initialization Using Dual-Component Fields

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Solution Overview

Problem

The existing methods for initializing a magnetic memory element with perpendicular magnetic anisotropy have a limited range of external magnetic fields, leading to reduced yield and scalability issues in manufacturing large-capacity magnetic memories.

Innovation Solution

An initialization method that applies a magnetic field with both perpendicular and parallel components to the data recording layer, allowing for a wider range of magnetic field magnitudes, thereby increasing the initialization margin and improving the reliability of domain wall introduction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a magnetic field with only perpendicular component is applied for initialization, then the initialization process is simple, but the range of external magnetic field magnitude is limited and initialization margin is reduced

Engineering Contradiction:
Improveinitialization process simplicityVSAvoidinitialization margin
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies a magnetic field with both perpendicular and parallel components instead of only perpendicular component. This dimensional extension of the magnetic field vector allows for a broader range of external magnetic field magnitudes and significantly increases the initialization margin, resolving the contradiction between process simplicity and initialization reliability

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Length of moving object

If the data recording layer width is reduced for scaling, then the device size is reduced, but the write current increases

Engineering Contradiction:
Improvedata recording layer widthVSAvoidwrite current
Core Design Contradiction:
Length of moving objectVSUse of energy by moving object

Solution Approach 1:

The patent changes the magnetization direction parameter from in-plane to perpendicular magnetization. This parameter change enables current-induced domain wall motion to occur at lower current densities, allowing the data recording layer width to be reduced for scaling while maintaining or reducing the write current requirement

Inventive Principle:
Principle #35Parameter changes

3Reliability

If a stepped structure is formed to introduce domain wall, then the domain wall can be introduced, but the manufacturing process becomes complex

Engineering Contradiction:
Improvedomain wall introductionVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts the domain wall introduction function from the structural design (stepped structure) and implements it through magnetic field application. By removing the need for complex stepped structures and using a magnetic field with both perpendicular and parallel components, the domain wall can be introduced effectively while simplifying the manufacturing process

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the initialization margin, reduces the probability of unsuccessful initialization, and allows for the use of a broader range of materials, improving writing and reading properties while simplifying the manufacturing process.

Implementation Method 1

applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer

Methodology Applied
Scientific EffectMagnetic field: Magnetic Field

Implementation Method 2

a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region

Methodology Applied
Scientific EffectPerpendicular magnetic anisotropy: Anisotropy

Data Source

PatentUS8565011B2Method of initializing magnetic memory element
Publication Date: 2013.10.22 NEC CORP
  • US8565011B2 patent drawing
  • US8565011B2 patent drawing
  • US8565011B2 patent drawing

AI summary

An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.