Magnetic Memory Device Dual-Layer Mold Insulator
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Solution Overview
Problem
Magnetic memory devices face challenges in achieving high-speed and low-voltage operations due to decreasing write current with smaller magnetic cell sizes, necessitating improved electrical characteristics for next-generation memory solutions.
Innovation Solution
A method for manufacturing magnetic memory devices involves forming a magnetic tunnel junction pattern using a dual-layer mold insulating structure with different thin-layer characteristics, where the first mold insulating layer is formed by atomic layer deposition at room temperature and the second by chemical vapor deposition at higher temperatures, and utilizing conductive patterns with different metals to reduce contact resistance and enhance electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If magnetic cell size is decreased to increase integration density, then device integration is improved, but write current magnitude decreases making low-voltage operation difficult
Solution Approach 1:
The patent applies local quality by using different metal materials for different conductive patterns based on their specific functional requirements. The first conductive pattern uses a first metal while the second conductive pattern uses a second metal with different properties, optimizing each region's electrical characteristics to maintain adequate write current in miniaturized cells.
Solution Approach 2:
The patent changes material parameters by selecting different metals with varying resistivity and melting point characteristics for different conductive patterns. This parameter optimization allows the device to maintain electrical performance despite reduced cell dimensions, addressing the write current degradation issue.
2Ease of manufacture
If conventional single-layer mold insulating structure is used, then manufacturing process is simple, but contact resistance between conductive patterns is high degrading electrical characteristics
Solution Approach 1:
The patent segments the mold insulating layer into multiple layers with different metal patterns embedded at different levels. This segmentation allows optimized electrical contact at each interface while maintaining manufacturing feasibility through sequential processing steps.
Solution Approach 2:
The patent employs composite material structures by combining different metal materials in different conductive patterns within the mold insulating layer. This composite approach reduces contact resistance by selecting metals with complementary electrical and thermal properties for specific contact interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach improves the electrical characteristics of magnetic memory devices by reducing contact resistance and maintaining low resistivity, enabling efficient high-speed and low-voltage operations, thus addressing the limitations of smaller magnetic cell sizes.
Implementation Method 1
the first mold insulating layer is formed by a first process at a first temperature, and the second mold insulating layer may be formed by a second process that is different from the first process at a second temperature that is greater than the first temperature. The first temperature may be about room temperature. In some embodiments, the first process may be an atomic layer deposition (ALD) process
Implementation Method 2
the second mold insulating layer may be formed by a second process that is different from the first process at a second temperature that is greater than the first temperature. In some embodiments, the second process may be a chemical vapor deposition (CVD) process. The second temperature may range from about 300° C. to about 500° C.
Data Source
AI summary
A magnetic memory device and a method for manufacturing the magnetic memory device are disclosed. The method includes forming a first interlayer insulating layer on a substrate, forming a first conductive pattern that penetrates the first interlayer insulating layer, forming a mold insulating layer that includes first and second mold insulating layers on the first interlayer insulating layer, forming a second conductive pattern that penetrates the first and second mold insulating layers and the first interlayer insulating layer, and forming a magnetic tunnel junction pattern on the second conductive pattern. The first mold insulating layer is in contact with the first conductive pattern, and the second mold insulating layer is disposed on the first mold insulating layer.