Magnetic Memory Device Electrode Positioning via Segmented Insulating Layers
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Solution Overview
Problem
Forming a top electrode on a suitable position of the magnetoresistive element in magnetic memory devices is difficult due to challenges in precise positioning and contact with the stacked structure.
Innovation Solution
A stacked structure with a first insulating layer having a protrusion and a second insulating layer of different material, forming holes that allow the top electrode to connect to the magnetoresistive element through a through hole, ensuring precise positioning and contact with the stacked structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form a top electrode on the magnetoresistive element, then the electrode connection process is simplified, but the positioning precision and contact reliability deteriorate
Solution Approach 1:
The patent divides the insulating layer into multiple segments: a first insulating layer and a second insulating layer with different materials and structures. The first insulating layer contains a through hole for electrode connection, while the second insulating layer provides additional protection and positioning features. This segmentation enables precise positioning of the top electrode through the through hole while maintaining reliable contact with the magnetoresistive element, resolving the contradiction between positioning precision and structural complexity.
Solution Approach 2:
The patent forms the through hole in the first insulating layer and the protrusion in the second insulating layer before forming the top electrode. This preliminary action ensures that the top electrode can be precisely positioned and reliably connected to the magnetoresistive element without requiring complex alignment processes during electrode formation, thereby improving positioning precision while keeping the overall process manageable.
2Reliability
If the top electrode is formed to contact the magnetoresistive element directly, then the electrical connection is improved, but the risk of contact with side or bottom electrodes increases
Solution Approach 1:
The patent introduces the first insulating layer with a through hole as an intermediary structure between the top electrode and the magnetoresistive element. The through hole provides a controlled pathway for electrical connection while the insulating material prevents unintended contact with side or bottom electrodes. The second insulating layer with its protrusion further reinforces this isolation, ensuring reliable electrical connection while eliminating harmful unintended contacts.
3Manufacturing precision
If a single-layer insulating structure is used, then the manufacturing process is simplified, but the positioning accuracy of the top electrode deteriorates
Solution Approach 1:
The patent segments the insulating structure into two distinct layers with different materials and functions. The first insulating layer provides the through hole for electrode positioning, while the second insulating layer with its protrusion offers additional positioning reference and protection. This segmentation improves positioning accuracy through the combined features of both layers while maintaining ease of manufacture by using standard multi-layer fabrication techniques.
Solution Approach 2:
The patent applies different materials and structural features to different local regions of the insulating structure. The first insulating layer has a through hole with specific dimensions and positioning, while the second insulating layer has a protrusion with different material properties and geometry. This local differentiation enables precise top electrode positioning without requiring complex manufacturing processes across the entire structure.
Data Source
AI summary
According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, a first insulating layer covering the stacked structure and including a protrusion based on the stacked structure, a second insulating layer provided on the first insulating layer, and an electrode connected to the stacked structure. The first insulating layer has a first hole passing through the first insulating layer, the electrode is connected to the stacked structure at least through the first hole, the second insulating layer has a second hole inside of which a part of the electrode and the protrusion are provided, and the second hole includes a part whose area increases toward the stacked structure.