Magnetic Memory Extending Portion Domain Wall Stability
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Solution Overview
Problem
Existing magnetic memory devices face instability in the movement of magnetic domain walls due to pinning sites, which affects the shift operation and requires high current for domain movement, leading to unstable operation.
Innovation Solution
The magnetic memory device incorporates a first magnetic section with an extending portion having a specific concentration gradient of elements like gadolinium and cobalt, reducing pinning sites by structuring the extending portion with distinct regions of different elemental concentrations, thereby stabilizing the movement of magnetic domains with lower current requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a magnetic memory device uses a conventional uniform magnetic section structure, then the device can be manufactured with simpler processes, but the magnetic domain wall movement becomes unstable due to pinning sites and requires high current
Solution Approach 1:
The magnetic section is designed with non-uniform composition: a first region containing rare earth elements (Gd, Tb, Dy, Nd, or Ho) and a second region containing transition metals (Fe, Co, Ni, B, Si, or P) with lower concentration of the first element. This local variation in material composition creates different magnetic properties in different regions, reducing pinning sites and stabilizing domain wall movement without requiring complex external structures
Solution Approach 2:
The magnetic section uses a composite structure combining rare earth elements and transition metals in specific regions. This composite material approach creates a magnetic section with optimized properties: the first region provides magnetic anisotropy and the second region provides exchange coupling, together achieving stable domain wall movement at lower current densities
2Speed
If high current is applied to move magnetic domains in conventional magnetic memory, then domain movement can be achieved, but operational stability deteriorates due to pinning sites and energy loss
Solution Approach 1:
The invention changes the compositional parameters of the magnetic section by introducing rare earth elements in the first region and transition metals with lower concentration in the second region. This parameter optimization reduces the critical current density needed for domain wall movement while eliminating pinning sites, enabling both fast and stable operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the stability of magnetic domain wall shift operations while reducing the necessary current, resulting in a more stable and efficient magnetic memory device with increased recording density.
Implementation Method 1
The extending portion includes a plurality of magnetic domains. The magnetic domains are arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction crossing the first direction.
Implementation Method 2
The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. Magnetization easy axis of the extending portion is directed along a second direction crossing the first direction.
Data Source
AI summary
A magnetic memory device according to an embodiment includes a first magnetic section, a read section, and a write section. The first magnetic section includes an extending portion. The extending portion extends in a first direction. The extending portion has a first interface and a second interface. The extending portion includes magnetic domains arranged along the first direction. Magnetization easy axis of the extending portion is directed along a second direction. The extending portion includes a first region and a second region. The first region contains at least one first element selected from a first group consisting of gadolinium, terbium, dysprosium, neodymium, and holmium. The second region contains at least one second element selected from a second group consisting of iron, cobalt, nickel, boron, silicon, and phosphorus. Concentration of the first element in the second region is lower than concentration of the first element in the first region.