Magnetic Memory Devices With Ferromagnetic Conductive Patterns

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Solution Overview

Problem

Magnetic memory devices face challenges in reducing switching current and aligning the magnetization direction of the free layer perpendicularly, leading to non-deterministic switching and high power consumption.

Innovation Solution

The magnetic memory device incorporates a structure with second conductive patterns having perpendicular magnetization directions, which enhance the perpendicular component of the torque for changing the magnetization direction, and includes a ferromagnetic material to assist in aligning the magnetization direction of the free layer, thereby reducing the switching current and ensuring deterministic switching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional magnetic memory device structures are used, then the device can operate, but the switching current is high and power consumption increases

Engineering Contradiction:

Improvepower consumptionVSAvoidswitching current

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The patent changes the magnetization direction parameter from in-plane to perpendicular orientation in the free layer, and introduces specific magnetic field parameters through the second conductive patterns. This parameter change enables lower switching currents and reduced power consumption while maintaining reliable switching operation.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures including the magnetic tunnel junction with multiple magnetic layers (CoFeB, CoFe, Ru, Ta) and the combination of ferromagnetic materials in the second conductive patterns. These composite materials provide both the necessary magnetic properties for perpendicular magnetization and the structural integrity for deterministic switching at lower currents.

Inventive Principle:

Principle #40Composite materials

2Reliability

If in-plane magnetization direction is used, then the structure is simpler, but the magnetization alignment is non-deterministic and switching reliability decreases

Engineering Contradiction:

Improveswitching determinismVSAvoidmagnetization alignment control

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by creating different magnetic field environments in different regions. The second conductive patterns with ferromagnetic materials are strategically positioned to provide localized perpendicular magnetic fields specifically where needed for deterministic switching, while other regions maintain their original structure. This localized approach ensures reliable perpendicular magnetization alignment without requiring complete structural redesign.

Inventive Principle:

Principle #3Local quality

3Reliability

If perpendicular magnetization alignment is implemented without additional conductive patterns, then the structure remains simple, but the switching current cannot be effectively reduced

Engineering Contradiction:

Improvemagnetization alignmentVSAvoidconductive pattern structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The second conductive patterns serve multiple functions simultaneously: they provide the perpendicular magnetic field necessary for deterministic magnetization alignment, they act as additional current paths for spin-torque switching, and they contribute to overall device stability. This multi-functionality allows effective perpendicular magnetization control and reduced switching current without proportionally increasing device complexity.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for easier alignment of the magnetization direction in a perpendicular direction, reducing the switching current and achieving deterministic switching in magnetic memory devices, enhancing their performance and efficiency.

Implementation Method 1

second conductive patterns on the lower contact plugs, respectively. The second conductive patterns may connect the lower contact plugs to the first conductive pattern. The second conductive patterns may include a ferromagnetic material.

Methodology Applied

Scientific EffectMagnetism: Magnetism

Implementation Method 2

The second conductive patterns may include a ferromagnetic material

Methodology Applied

Scientific EffectFerromagnetism: Ferromagnetism

Implementation Method 3

A resistance value of the magnetic tunnel junction may be changed depending on magnetization directions of the two magnetic layers

Methodology Applied

Scientific EffectMagnetoresistance: Magnetoresistance

Data Source

PatentUS11665910B2Magnetic memory devices

Publication Date: 2023.05.30 SAMSUNG ELECTRONICS CO LTD

AI summary

A magnetic memory device includes a magnetic tunnel junction pattern on a substrate, a first conductive pattern between the substrate and the magnetic tunnel junction pattern, lower contact plugs between the first conductive pattern and the substrate and disposed at respective sides of the magnetic tunnel junction pattern, and second conductive patterns on the lower contact plugs, respectively. The second conductive patterns connect the lower contact plugs to the first conductive pattern. The second conductive patterns include a ferromagnetic material.