Magnetic Memory Cell Gap Thermal Insulation

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Solution Overview

Problem

Magnetic memory technologies face challenges in reducing electron current density during programming, leading to increased power consumption and efficiency issues due to high electron migration.

Innovation Solution

A gap is formed between the dielectric material and the magnetic stack structure to delay heat dissipation, maintaining the temperature of the magnetic stack and reducing the electron current density required during programming.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high electron current density is used for spin-transfer programming, then the magnetic resistance magnitude can be changed, but power consumption increases and electron migration occurs

Engineering Contradiction:

Improveprogramming effectivenessVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

A gap structure is introduced as an intermediary thermal insulation layer between the magnetic stack structure and the surrounding dielectric material. This gap acts as a thermal mediator that reduces heat dissipation from the magnetic stack, thereby maintaining higher temperature during programming operations and reducing the electron current density required for effective spin-transfer programming

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If high electron current density is applied during programming, then spin-transfer can be achieved, but electron migration deteriorates memory quality

Engineering Contradiction:

Improveprogramming capabilityVSAvoidelectron migration

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The gap structure serves as a thermal intermediary that insulates the magnetic stack structure from the dielectric material. By reducing thermal coupling, the gap allows programming to be performed at lower electron current densities, thereby achieving spin-transfer effectiveness while minimizing electron migration and its harmful effects on memory quality

Inventive Principle:

Principle #24Intermediary (Mediator)

3Temperature

If heat dissipates quickly from the magnetic stack structure, then the dielectric material cools rapidly, but the programming efficiency decreases

Engineering Contradiction:

Improvemagnetic stack structure temperatureVSAvoidprogramming efficiency

Core Design Contradiction:

TemperatureVSProductivity

Solution Approach 1:

The gap structure converts the potentially harmful effect of heat isolation into a beneficial feature by preventing excessive heat dissipation from the magnetic stack structure. This thermal retention maintains elevated temperature during programming, which enhances spin-transfer efficiency and allows for more effective data writing with reduced current density requirements

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively decreases power consumption and enhances the stability of magnetic memory while being compatible with conventional manufacturing processes.

Implementation Method 1

While programming the memory cell, the magnetic stack structure generates heat

Methodology Applied

Scientific EffectHeat generation: Joule Heating

Implementation Method 2

the gap delays heat loss

Methodology Applied

Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 3

the magnetic memory composed of different ferromagnetic material layers, anti-ferromagnetic material layers and conductive material layers employs the unique characteristics of magnetic resistance in the non-destructive programming of data

Methodology Applied

Scientific EffectMagnetic resistance: Magnetoresistance

Implementation Method 4

employs the unique characteristics of magnetic resistance in the non-destructive programming of data... to perform spin-transfer for changing the magnitude of the magnetic resistance of the memory cell

Methodology Applied

Scientific EffectSpin transfer:

Data Source

PatentUS7782659B2Magnetic memory and memory cell thereof and method of manufacturing the memory cell

Publication Date: 2010.08.24 MACRONIX INTERNATIONAL CO LTD

AI summary

A magnetic memory, a memory cell thereof, and a method of manufacturing the memory cell are provided. The memory cell of the magnetic memory includes a bottom contact layer, a bit line, a magnetic stack structure and a dielectric material. The bit line is disposed over the bottom contact layer. The magnetic stack structure is disposed between the bottom contact layer and the bit line. The dielectric material at least fills between the bottom contact layer and the bit line and surrounds the magnetic stack structure. A gap is formed between the dielectric material and the magnetic stack structure. During programming of the memory cell, the magnetic stack structure generates heat, and the gap delays heat loss.