Magnetic Memory Device Evaluation Using Grouped Magnetic Field Segmentation

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Solution Overview

Problem

The existing methods for evaluating the magnetic characteristics of magnetoresistive effect elements in magnetic memory devices are time-consuming, making it difficult to efficiently assess these characteristics in a short time.

Innovation Solution

A manufacturing method that involves determining specific magnetic fields for each magnetoresistive effect element, defining groups based on these fields, and using a common maximum applied magnetic field to measure minor loop characteristics, allowing for efficient evaluation of magnetic memory devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If traditional methods are used to evaluate magnetic characteristics of magnetoresistive effect elements, then measurement accuracy is maintained, but evaluation time becomes excessively long

Engineering Contradiction:

Improvemagnetic characteristics evaluation accuracyVSAvoidevaluation time

Core Design Contradiction:

Measurement precisionVSLoss of time

Solution Approach 1:

The patent divides magnetoresistive effect elements into multiple groups based on their first magnetic field characteristics. By segmenting the evaluation process into group-level testing rather than individual element testing, the method reduces the total number of measurements required while maintaining measurement accuracy through representative sampling from each group.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary classification of magnetoresistive effect elements by determining their first magnetic field values and grouping them accordingly before the actual magnetic characteristics evaluation. This preliminary action allows the selection of a single representative element from each group for testing with the common maximum applied magnetic field, significantly reducing evaluation time while preserving measurement accuracy.

Inventive Principle:

Principle #10Preliminary action

2Measurement precision

If individual maximum applied magnetic field is determined for each magnetoresistive effect element, then measurement accuracy is improved, but device complexity and processing time increase

Engineering Contradiction:

Improvemagnetic characteristics measurement accuracyVSAvoidevaluation process complexity

Core Design Contradiction:

Measurement precisionVSDevice complexity

Solution Approach 1:

The patent merges the magnetic characteristics evaluation process for multiple magnetoresistive effect elements by using a common maximum applied magnetic field for an entire group of elements. Instead of determining individual maximum fields for each element, the method combines them into groups and performs unified evaluation, reducing process complexity while maintaining accuracy through proper group representation.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent creates a universal evaluation approach where a single maximum applied magnetic field value serves multiple magnetoresistive effect elements within a group. This universal method eliminates the need for element-specific parameter determination, simplifying the evaluation process while preserving measurement accuracy through the grouping strategy.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the efficient acquisition of magnetic characteristics for multiple magnetoresistive effect elements using a common maximum applied magnetic field, significantly reducing evaluation time and improving the efficiency of magnetic memory device manufacturing.

Implementation Method 1

a magnetic memory device in which magnetoresistive effect elements are formed on a semiconductor substrate

Methodology Applied

Scientific EffectMagnetoresistive effect: Magnetoresistance

Implementation Method 2

when an applied magnetic field is increased, the magnetoresistive effect elements being in a first resistance state if the applied magnetic field is lower than a first magnetic field, the magnetoresistive effect elements being in a second resistance state having a resistance greater than a resistance of the first resistance state if the applied magnetic field is higher than the first magnetic field and lower than a second magnetic field

Methodology Applied

Scientific EffectMagnetic hysteresis: Magnetic Hysteresis

Data Source

PatentUS9449892B2Manufacturing method of magnetic memory device

Publication Date: 2016.09.20 KIOXIA CORP

AI summary

According to one embodiment, a manufacturing method of a magnetic memory device, includes obtaining first and second magnetic fields for each of magnetoresistive effect elements, defining a group of the elements, for the first and second magnetic fields of the elements in the group, a highest first magnetic field being lower than a lowest second magnetic field, and a difference between the highest first magnetic field and the lowest second magnetic field being greater than a predetermined difference, determining a maximum applied magnetic field higher than the highest first magnetic field and lower than the lowest second magnetic field, and obtaining magnetic characteristics for each of the elements in the group by applying a magnetic field decreasing from the maximum applied magnetic field after the magnetic field is increased up to the maximum applied magnetic field.