Magnetic Memory Insulating Layer Deposition via Segmented Sputtering
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Solution Overview
Problem
Current methods for forming magnetic memory devices face challenges in matching lattice structures and achieving high deposition rates, which affect the reliability and mass production efficiency of these devices.
Innovation Solution
The method involves using a radio-frequency sputtering process with multiple insulators as targets to form an insulating layer and a non-magnetic layer, where the insulators are made of metal oxides, and applying thermal treatment to crystallize the amorphous portions, ensuring lattice matching between layers and increasing deposition rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional sputtering methods are used to form insulating layers, then the process is simple, but the deposition rate is low and lattice matching with underlying layers is difficult to achieve
Solution Approach 1:
The insulating layer formation process is segmented into multiple steps: first forming a seed layer with specific crystal orientation, then forming the main insulating layer. This segmentation allows each layer to be optimized independently - the seed layer for lattice matching and the main layer for high deposition rate, thereby resolving the contradiction between manufacturing precision and productivity
Solution Approach 2:
A seed layer is formed preliminarily before the main insulating layer. This seed layer is specifically designed to match the lattice structure of the underlying magnetic layer, establishing a crystal orientation template that enables the subsequent high-rate deposition of the main insulating layer while maintaining lattice matching throughout the structure
2Productivity
If multiple insulators are used as targets in sputtering, then deposition rate increases, but the process complexity increases
Solution Approach 1:
Multiple insulator targets are merged into a single composite target structure where different insulator materials are positioned at specific locations. This allows simultaneous deposition from multiple materials through one sputtering process, achieving high deposition rates while avoiding the complexity of multiple separate sputtering steps
Solution Approach 2:
A carrier substrate or intermediate structure is used to hold and position multiple insulator materials in precise configurations. This intermediary enables the complex multi-material target structure to be manufactured and replaced as a single unit, reducing process complexity while maintaining the benefits of multiple insulator deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the tunneling magnetoresistance ratio of magnetic tunnel junctions and facilitates mass production of magnetic memory devices with improved reliability.
Implementation Method 1
generating a first ion source and a second ion source from the first insulator and the second insulator, respectively, and forming an insulating layer on the lower structure using the first ion source and the second ion source
Implementation Method 2
performing a thermal treatment process on the insulating layer
Implementation Method 3
crystallize the amorphous portions, ensuring lattice matching between layers
Data Source
AI summary
A method of forming a layer includes providing a first insulator and a second insulator over a lower structure, generating a first ion source and a second ion source from the first insulator and the second insulator, respectively, and forming an insulating layer on the lower structure using the first ion source and the second ion source. The first and second insulators are vertically spaced apart from the lower structure and are laterally spaced apart from each other. The first insulator and the second insulator include the same material.