Magnetic Memory Device Insulating Structure Stress Management
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Solution Overview
Problem
Current magnetic memory devices face challenges in increasing storage density due to issues with conductive member stress and temperature distribution, leading to instability and potential damage from local temperature increases and expansion.
Innovation Solution
The magnetic memory device incorporates a unique configuration with oblique insulating side surfaces and differing materials for insulating regions, which helps disperse stress and maintain stability by relaxing local stress on the conductive member, allowing for reduced element size and increased storage density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If element size is reduced to increase storage density, then storage density increases, but local temperature increase and stress concentration worsen
Solution Approach 1:
The patent applies local quality by providing different insulating portions (first, second, and third insulating portions) with different materials in different locations around the conductive member. The first insulating portion has different material than the second insulating portion, which has different material than the third insulating portion. This localized material differentiation allows for optimized thermal and stress management in each specific region, enabling reduced element size while controlling local temperature increases and stress concentration.
2Quantity of substance
If element size is reduced to increase storage density, then storage density increases, but conductive member stress and expansion damage worsen
Solution Approach 1:
The patent provides different insulating portions with different materials positioned at different locations around the conductive member. The first insulating portion has different material than the second insulating portion, which has different material than the third insulating portion. This localized material differentiation allows for optimized stress distribution and expansion management in each specific region, enabling reduced element size while controlling local stress concentration and preventing conductive member damage.
3Reliability
If insulating portions use different materials, then stress distribution and thermal management improve, but device complexity increases
Solution Approach 1:
The patent segments the insulating structure into multiple distinct insulating portions (first, second, and third insulating portions) positioned at different locations around the conductive member. Each segment uses different materials optimized for its specific function and location. This segmentation allows for specialized material properties in each region to manage stress and temperature independently, improving overall reliability while maintaining a systematic and organized structure that is manageable despite the material complexity.
Data Source
AI summary
According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.