Magnetic Memory Device Intermediate Region Composition
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Solution Overview
Problem
Magnetic memory devices face challenges in enhancing magnetic coupling between two magnetic layers without degrading the characteristics of the reference layer, as reducing the nonmagnetic layer thickness leads to degraded reference layer characteristics.
Innovation Solution
A magnetic memory device with a stacked structure that includes a first magnetic layer, a second magnetic layer with a fixed magnetization direction, and a nonmagnetic tunnel barrier layer, where the second magnetic layer has a higher concentration of a predetermined nonmagnetic element in an intermediate region, allowing for enhanced magnetic coupling without reducing the nonmagnetic layer thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Force
If the nonmagnetic layer thickness is reduced to enhance magnetic coupling between two magnetic layers, then the magnetic coupling is improved, but the characteristics of the reference layer are degraded
Solution Approach 1:
The patent applies local quality by creating an intermediate region within the nonmagnetic layer that has a different composition (higher concentration of nonmagnetic element) compared to the first and second regions. This localized compositional variation enhances magnetic coupling specifically at the interface between magnetic layers while preserving the overall thickness and characteristics of the reference layer, thus resolving the contradiction between improving magnetic coupling and maintaining reference layer characteristics.
2Force
If the nonmagnetic layer thickness is reduced to enhance magnetic coupling, then the magnetic coupling between layers is improved, but the stability of the reference layer is degraded
Solution Approach 1:
The intermediate region with higher nonmagnetic element concentration is introduced locally within the nonmagnetic layer to enhance magnetic coupling without reducing the overall layer thickness. This localized modification allows the reference layer to maintain its structural stability and compositional integrity while achieving improved magnetic coupling through the specially designed intermediate region.
3Force
If the nonmagnetic layer thickness is reduced to enhance magnetic coupling, then the magnetic interaction between layers is improved, but the performance of the magnetoresistive element is degraded
Solution Approach 1:
The patent introduces an intermediate region with distinct compositional characteristics (higher nonmagnetic element concentration) within the nonmagnetic layer. This local modification enhances magnetic coupling between the first and second magnetic layers while preserving the overall thickness and performance characteristics of the magnetoresistive element, thereby resolving the contradiction between improved magnetic interaction and maintained element performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances ferromagnetic coupling between the magnetic layers, maintaining the characteristics of the magnetoresistive element and enabling improved magnetic memory device performance.
Implementation Method 1
enhance the magnetic coupling between the two magnetic layers
Data Source
AI summary
According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first and second magnetic layers. The second magnetic layer includes a first main surface on the nonmagnetic layer side and a second main surface opposite to the first main surface, and includes a first region on the first main surface side and a second region on the second main surface side, and an intermediate region between the first and second regions and containing a predetermined nonmagnetic element. A concentration of the predetermined nonmagnetic element in the intermediate region is higher than that in the first and second regions. The second magnetic layer contains a magnetic element from the first to second main surfaces.