Magnetic Memory Devices Using Perpendicular Magnetization
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Solution Overview
Problem
Current semiconductor memory devices, particularly magnetic memory devices, face challenges in achieving faster read/write operations and lower power consumption while maintaining reliability and integration, as they require efficient magnetization control and resistance variation for data storage.
Innovation Solution
A magnetic memory device design incorporating a uniform free pattern with a nonmagnetic metal-oxide pattern generating atomic-magnetic moments perpendicular to its surface, a reference pattern with fixed magnetization, and a tunnel barrier layer, allowing for adjustable magnetization direction and increased atomic-magnetic moments, thereby reducing critical current density and enhancing integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional magnetic memory devices are used, then data storage function is achieved, but power consumption is high and read/write speed is limited
Solution Approach 1:
The patent changes the magnetization direction parameter from in-plane to perpendicular magnetization, and modifies the magnetic layer composition parameters (CoFeB alloy with specific thickness ratios) to achieve lower critical current density for switching, thereby reducing power consumption while enabling faster write operations
Solution Approach 2:
The patent uses composite magnetic tunnel junction structures combining CoFeB magnetic layers with MgO tunnel barriers and Ta nonmagnetic layers, creating a composite material system that exhibits both low damping ratio for fast switching and high TMR ratio for reliable read operations, thus improving both speed and energy efficiency
2Reliability
If magnetic memory device complexity is increased to improve reliability, then data storage reliability improves, but device manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by creating a surface local region with oxidized CoFeB material at the top surface of the uniform free pattern, while keeping the bulk material composition uniform. This localized oxidation enhances perpendicular magnetic anisotropy and stabilizes magnetization direction, improving reliability without requiring complex overall device restructuring
Solution Approach 2:
The patent performs preliminary oxidation of the CoFeB layer surface during the manufacturing process to establish the surface local region before final device assembly. This preliminary action ensures stable perpendicular magnetization and reliable data storage from the outset, avoiding the need for complex post-processing or additional reliability enhancement steps
3Productivity
If degree of integration is increased to reduce device size, then storage capacity improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs homogeneity by maintaining uniform composition and thickness throughout the CoFeB magnetic layers and MgO tunnel barrier layers. This uniform structure ensures consistent magnetic properties and TMR characteristics across the entire device, enabling high-density integration without compromising manufacturing yield or requiring excessive precision tolerances
Solution Approach 2:
The patent transitions from in-plane magnetization to perpendicular magnetization, effectively utilizing the vertical dimension for magnetization direction. This dimensional change allows for smaller lateral dimensions and higher integration density while maintaining stable magnetic properties, as the perpendicular anisotropy provides robust magnetization control independent of lateral size reductions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables lower power consumption, improved reliability, and increased integration by reducing critical current density and optimizing magnetization control, facilitating faster and more efficient data storage operations.
Implementation Method 1
a nonmagnetic metal-oxide pattern contacting the second surface of the uniform free pattern, wherein a content ratio of a nonmagnetic metal in the nonmagnetic metal-oxide pattern is greater than a stoichiometric ratio and a concentration of the nonmagnetic metal is substantially uniform over the entire nonmagnetic metal-oxide pattern
Implementation Method 2
A MTJ may include two magnetic materials and a tunnel barrier layer disposed therebetween. Depending on the magnetization directions of the two magnetic materials, a resistance value of the MTJ may vary.
Data Source
AI summary
Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.