Magnetic Memory Device Protection Insulating Layer Etch Residue
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Solution Overview
Problem
Current magnetic memory devices face challenges in achieving high reliability and integration density due to issues with etch residue and short circuits during the formation of magnetic tunnel junction patterns, which affect the integrity and performance of the memory cells.
Innovation Solution
A method of fabricating magnetic memory devices involves forming a protection insulating layer on the landing pad to prevent etching and etch residue from contaminating the magnetic tunnel junction patterns, thereby maintaining the integrity of the memory cells and increasing integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the magnetic tunnel junction layer is patterned without a protection insulating layer, then the manufacturing process is simpler, but etch residue contaminates the magnetic tunnel junction patterns causing short circuits
Solution Approach 1:
A protection insulating layer is introduced as an intermediary between the landing pad and the magnetic tunnel junction layer. This layer prevents etch residue from contaminating the magnetic tunnel junction patterns during the patterning process, thereby maintaining device reliability while allowing for a manageable manufacturing process.
Solution Approach 2:
The protection insulating layer is formed in advance before the magnetic tunnel junction layer is deposited and patterned. This preliminary action ensures that the landing pad is protected from etch contamination during subsequent patterning operations, preventing short circuits without requiring complex process modifications.
2Reliability
If the protection insulating layer completely covers the landing pad, then etch residue prevention is maximized, but integration density is reduced
Solution Approach 1:
The protection insulating layer is applied selectively rather than uniformly across the entire landing pad. By providing protection only in the specific regions where etch residue contamination would occur during magnetic tunnel junction patterning, the design achieves reliable short circuit prevention while maximizing the usable area for high integration density.
Data Source
AI summary
A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.