Magnetic Memory Stabilizing Parallel State With Pulse Current
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Solution Overview
Problem
Magnetic memory apparatuses face instability in maintaining the 'parallel' state due to the ease of transitioning back to the 'antiparallel' state when voltage is applied, making it difficult to achieve stable operations.
Innovation Solution
A magnetic memory apparatus with a first stacked body comprising a magnetic layer, a counter magnetic layer, and a nonmagnetic intermediate layer, where a controller supplies a pulse current with a constant-current period to change the electrical resistance value, stabilizing the transition from the 'antiparallel' to the 'parallel' state by reducing the potential barrier.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage is applied to transition from 'antiparallel' to 'parallel' state, then the electrical resistance value changes, but the magnetic memory apparatus transitions back to the 'antiparallel' state easily, causing operational instability
Solution Approach 1:
The patent applies periodic pulse current with a constant-current period to the magnetic memory apparatus. This periodic action allows the system to transition to the desired state and then maintain it by suppressing premature transitions back, thereby achieving stable operations through controlled temporal sequences of current application
Solution Approach 2:
The patent utilizes changes in electrical resistance value as a parameter to indicate and maintain the magnetic state. By monitoring and controlling the electrical resistance value during and after pulse current application, the system can determine when the transition is complete and when to suppress return transitions, ensuring operational stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures stable operations by suppressing the return to the 'antiparallel' state, maintaining the 'parallel' state effectively, thereby enhancing the reliability of the magnetic memory apparatus.
Implementation Method 1
A first electrical resistance value of the first stacked body before the supply of the first pulse current is different from a second electrical resistance value of the first stacked body after the supply of the first pulse current
Data Source
AI summary
According to one embodiment, a magnetic memory apparatus includes a first stacked body and a controller. The first stacked body includes a first magnetic layer, a first counter magnetic layer, and a first intermediate layer placed between the first magnetic layer and the first counter magnetic layer. The first intermediate layer is nonmagnetic. The controller is electrically connected to the first magnetic layer and the first counter magnetic layer. The controller is configured to perform a first operation of supplying first pulse current to the first stacked body. The first pulse current includes a first constant-current period. A first electrical resistance value of the first stacked body before the supply of the first pulse current is different from a second electrical resistance value of the first stacked body after the supply of the first pulse current.