Magnetic Memory Cell With RF Field Interconnection
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Solution Overview
Problem
The existing spin-polarized current direct driving magnetization reversal method in magnetic memory faces issues with incomplete magnetization reversal due to short write-in current pulses, leading to reliability concerns and increased power consumption, especially as memory capacity increases.
Innovation Solution
A magnetic memory design that includes a memory cell with a magnetic recording element, a radio-frequency current-induced magnetic field interconnection, and a ground line, where the interconnection generates a radio-frequency current-induced magnetic field perpendicular to the magnetization easy axis, reducing the write-in current and achieving rapid magnetization reversal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If spin-polarized current direct driving magnetization reversal method is used, then magnetization control on nanoscale is achieved, but incomplete magnetization reversal occurs when pulse width is short
Solution Approach 1:
The patent combines two magnetization reversal methods: spin-polarized current direct driving and oscillating magnetic field assistance. The oscillating magnetic field is applied simultaneously with the write-in current to assist the spin-polarized electrons in achieving complete magnetization reversal, thereby resolving the incompleteness issue while maintaining nanoscale control precision
Solution Approach 2:
An oscillating magnetic field is introduced as an intermediary to facilitate the magnetization reversal process. This external oscillating field acts as a mediator that works together with the spin-polarized current to ensure complete and reliable magnetization reversal, particularly when the write-in current pulse width is short
2Reliability
If write-in current is increased to avoid incomplete reversal, then magnetization reversal completeness is improved, but heat generation increases causing element deterioration
Solution Approach 1:
The patent merges oscillating magnetic field assistance with reduced write-in current to achieve complete magnetization reversal. The oscillating field compensates for the lower current intensity, ensuring reliable reversal without generating excessive heat that would deteriorate the magnetoresistive effect element
Solution Approach 2:
The patent changes the operational parameters by introducing an oscillating magnetic field frequency and amplitude that work synergistically with the write-in current. This parameter adjustment allows for lower current magnitudes while maintaining complete magnetization reversal, thereby reducing heat generation and preventing element deterioration
3Loss of information
If magnetic field generation source is made small to localize field, then cross talk is reduced, but sufficient magnetic field strength cannot be generated
Solution Approach 1:
The patent combines localized magnetic field generation with oscillating field assistance to achieve both low cross talk and sufficient field strength. The oscillating magnetic field compensates for the reduced field strength from the miniaturized source, while the localized source maintains low cross talk between adjacent memory cells
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces variations in magnetization reversals, decreases the write-in current, and enhances magnetization reversal efficiency while maintaining reliability and minimizing heat-related issues.
Implementation Method 1
The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer, by passing a radio-frequency current through the interconnection
Implementation Method 2
a magnetic recording layer whose magnetization is substantially reversed by a spin-polarized electron passing through the magnetic recording layer
Data Source
AI summary
A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.