Magnetic Memory Devices With Segmented Structures For Data Access
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Solution Overview
Problem
Magnetic memory devices face challenges in efficiently writing and reading data from opposite ends of a racetrack memory due to the need for extra space to move a magnetic domain wall, which reduces writing capacity and slows down data access.
Innovation Solution
A magnetic memory device comprising a first magnetic structure with a read electrode to sense and convert magnetic moments to electric signals, a second magnetic structure with a write electrode to change magnetic moments based on electric signals, and a control circuit to manage data transfer between the two structures, allowing for efficient reading and writing operations across the entire magnetic structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If extra space is provided in racetrack memory to move magnetic domain wall, then data reading from opposite ends is enabled, but writing capacity is reduced
Solution Approach 1:
The magnetic memory device is divided into two separate magnetic structures (first magnetic structure and second magnetic structure) with different magnetic anisotropies. Each structure has its own read electrode and write electrode, allowing independent reading and writing operations without requiring extra space for domain wall movement in a single racetrack structure.
Solution Approach 2:
A control circuit acts as an intermediary to transfer data between the first and second magnetic structures. The control circuit receives electric signals from the read electrode, processes the data, and transfers it to the write electrode, enabling efficient data movement without mechanical domain wall displacement.
2Adaptability or versatility
If extra space is provided for magnetic domain wall movement, then bidirectional data access is possible, but data access time increases
Solution Approach 1:
The patent replaces the mechanical domain wall movement mechanism with an electrical signal-based system. Electric signals are used to sense and write data directly to magnetic structures, eliminating the time-consuming mechanical displacement of domain walls while enabling bidirectional access through separate magnetic structures with different anisotropies.
Solution Approach 2:
The magnetic structures are designed with different magnetic anisotropies (first magnetic anisotropy and second magnetic anisotropy) that can be dynamically controlled. This allows the system to optimize data access characteristics for different operational modes, achieving fast bidirectional access without the delays associated with domain wall movement.
3Ease of operation
If mechanical driving parts are used to control magnetic head position, then writing and reading operations can be performed, but operation speed is limited
Solution Approach 1:
The patent completely eliminates mechanical driving parts and magnetic head positioning mechanisms. Instead, electric signals are applied directly to the magnetic structures to perform writing and reading operations. This electrical approach removes all mechanical speed limitations while maintaining full operational capability for data writing and reading.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables more efficient writing, moving, and reading of data across the magnetic structure, improving data access times and capacity compared to conventional magnetic memory devices.
Implementation Method 1
a read electrode on an end of the magnetic structure and configured to sense a magnetic moment of the magnetic structure and to convert the magnetic moment to an electric signal
Implementation Method 2
a write electrode on an opposite end of the magnetic structure and configured to change a magnetic moment of the magnetic structure based on the electric signal
Implementation Method 3
a magnetic structure comprising a magnetic anisotropy
Data Source
AI summary
A magnetic memory device includes a first magnetic structure having a magnetic anisotropy, a read electrode that is on an end of the first magnetic structure and configured to sense a first magnetic moment of the first magnetic structure and to convert the first magnetic moment to an electric signal, a second magnetic structure spaced apart from the first magnetic structure, the second magnetic structure having a magnetic anisotropy, and a write electrode that is on an end of the second magnetic structure and configured to change a second magnetic moment of the second magnetic structure, based on the electric signal. The magnetic memory device executes operations of writing, moving, and reading data on almost the entire region of the magnetic structure in a more efficient manner, compared with the conventional magnetic memory device.