Magnetic Memory Element Domain Wall Control via Segmented Electrodes
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Solution Overview
Problem
Current magnetic memory elements face challenges in reducing power consumption while effectively moving domain walls for memory operations, as existing designs often result in high current flow through magnetic units, leading to increased energy usage.
Innovation Solution
The magnetic memory element incorporates a first magnetic unit with multiple domains, a second magnetic unit having distinct conductive and insulating regions, and an insulating unit, with electrode configurations that allow for controlled current flow to move and sense domain wall positions, reducing power consumption by optimizing the magnetic unit configurations and electrode placements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a current is caused to flow in the magnetic unit to move domain walls, then memory operation is enabled, but power consumption increases
Solution Approach 1:
The magnetic unit is divided into multiple magnetic domains with different magnetization directions. By segmenting the magnetic unit into regions with distinct magnetic properties, the patent enables selective manipulation of domain walls using lower current densities, as each domain can be independently controlled rather than requiring high current to move walls through the entire structure.
Solution Approach 2:
The patent introduces a magnetic unit with non-uniform magnetization distribution, where different regions have different easy axes of magnetization. This local quality variation creates favorable conditions for domain wall nucleation and movement in specific regions, reducing the overall current requirement compared to uniform magnetic structures.
2Quantity of substance
If multiple magnetic domains are provided in the magnetic unit, then memory capacity increases, but current flow and power consumption increase
Solution Approach 1:
The magnetic unit is segmented into multiple magnetic domains that can be independently controlled. This segmentation allows for increased memory capacity through multiple stable states while using lower current densities for each individual domain transition, thereby reducing total power consumption compared to moving domain walls across the entire magnetic unit.
Solution Approach 2:
Instead of requiring full current flow through the entire magnetic unit to achieve a state change, the patent enables partial action by locally manipulating specific magnetic domains. This allows memory operations to be performed with sufficient current only in the regions where domain wall movement is needed, reducing overall power consumption while maintaining memory capacity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient movement and sensing of domain walls with reduced current flow, thereby lowering power consumption and enhancing memory operation stability and density.
Implementation Method 1
a second magnetic unit (300) is provided on at least a part of the insulating unit (200)... at least one of the first region or the second region is magnetic
Data Source
AI summary
According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit includes a plurality of magnetic domains. The second magnetic unit includes a first region and a second region. The first region includes a conductive material. The second region includes an insulating material. At least one of the first region or the second region is magnetic. The first insulating unit is provided between the first magnetic unit and the second magnetic unit. The first electrode and the second electrode are connected to the first magnetic unit. A part of the second magnetic unit and a part of the first insulating unit are provided between the third electrode and a part of the first magnetic unit.