Magnetic Memory Device Shared Conductive Layer Integration
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Solution Overview
Problem
Current magnetic memory devices, such as MRAM, face challenges in integration with semiconductor processes due to complex manufacturing requirements, leading to increased costs and limitations in miniaturization, storage density, and performance.
Innovation Solution
A magnetic memory device and method that integrate the processing steps for forming a spin transfer torque (STT)/spin-orbit torque (SOT) magnetic random access memory unit and a resistance unit, allowing them to share the same patterned conductive layer, thereby simplifying manufacturing and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If magnetic memory devices are formed on separate interconnect metal layers using BEOL process, then magnetic memory functionality is achieved, but manufacturing complexity increases and integration with semiconductor control circuit becomes difficult
Solution Approach 1:
The patent merges the formation of magnetic memory devices and semiconductor control circuits into a single integrated structure on the same substrate. The conductive layer serves dual purposes as both interconnect for control circuits and as the base layer for magnetic memory devices, eliminating the need for separate BEOL process layers and reducing manufacturing complexity.
Solution Approach 2:
The conductive layer is designed to serve multiple functions: it acts as an interconnect layer for semiconductor control circuits and simultaneously serves as the foundational layer for magnetic memory devices. This multi-functionality reduces the total number of layers and process steps required, improving integration compatibility while reducing device complexity.
2Ease of manufacture
If additional reticles are used for multiple photolithography and etching processes, then magnetic memory devices can be manufactured, but manufacturing cost increases
Solution Approach 1:
The patent combines the photolithography and etching processes for magnetic memory devices with those for semiconductor control circuits. By using the same conductive layer and integrating both device types on the same substrate, the number of separate reticles and process steps is reduced, directly lowering manufacturing cost and improving ease of manufacture.
Solution Approach 2:
The conductive layer and associated processing steps serve dual purposes for both magnetic memory devices and control circuits. This universality allows a single set of photolithography and etching processes to create both device types, reducing the total number of manufacturing steps and reticles required.
3Productivity
If mature memory devices are used, then current technology is maintained, but size miniaturization and storage density are approaching limits
Solution Approach 1:
The patent employs a composite structure combining ferromagnetic layers, antiferromagnetic layers, and conductive materials to create magnetic memory devices with perpendicular magnetic anisotropy. This composite material approach enables smaller device footprints and higher storage density while maintaining manufacturability with current precision capabilities.
Solution Approach 2:
The patent utilizes perpendicular magnetization orientation (out-of-plane magnetic anisotropy) instead of in-plane magnetization. This dimensional change in magnetic field orientation allows for smaller cell sizes and higher storage density without compromising manufacturing precision, effectively breaking the miniaturization limits of mature devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces the number of reticles needed, and significantly lowers the manufacturing cost of magnetic memory devices while maintaining high performance and integration with semiconductor circuits.
Implementation Method 1
The processing steps for forming a spin transfer torque (STT)/spin-orbit torque (SOT) magnetic random access memory unit
Implementation Method 2
The processing steps for forming a spin transfer torque (STT)/spin-orbit torque (SOT) magnetic random access memory unit
Implementation Method 3
magnetic memory devices, such as magneto resistive random access memory (MRAM) devices
Data Source
AI summary
A magnetic memory device includes a substrate, a patterned conductive layer, and a magnetic tunnel junction (MTJ) structure. The substrate includes a memory area and a circuit area. The patterned conductive layer includes a first conductive pattern and a second conductive pattern that are separated from each other. The first conductive pattern is disposed in the memory area, and the second conductive pattern is disposed in the circuit area. The MTJ structure is disposed on the first conductive pattern and electrically contact with the first conductive pattern.