Magnetic Memory MTJ Shield Lines for External Field Reliability
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Solution Overview
Problem
Magnetic memory devices face challenges in reliability due to the impact of external magnetic fields, particularly when using perpendicular magnetization, which reduces their performance and integration capabilities.
Innovation Solution
Incorporating lower and upper shield lines made of magnetic material that intersect and are positioned near the magnetic tunnel junction, minimizing the effect of horizontal magnetic field components and enhancing the device's reliability and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If perpendicular magnetization is used in magnetic memory devices, then integration capabilities are improved, but reliability deteriorates due to impact from external magnetic fields
Solution Approach 1:
The patent introduces shield lines made of magnetic material as intermediary elements positioned between the external magnetic field source and the magnetic tunnel junction. These shield lines act as mediators that intercept and redirect horizontal magnetic field components, protecting the MTJ from direct exposure to external magnetic fields while allowing the perpendicular magnetization configuration to maintain its integration advantages.
Solution Approach 2:
The patent converts the harmful horizontal component of external magnetic fields into a beneficial effect by using shield lines that redirect these field components. The shield lines utilize the magnetic properties of the material to channel horizontal field components away from the MTJ, transforming what would be a detrimental interference into a controlled magnetic field distribution that enhances device reliability.
2Reliability
If shield lines are added to protect against external magnetic fields, then reliability is improved, but device complexity increases
Solution Approach 1:
The shield lines are designed to serve multiple functions simultaneously: they provide magnetic shielding against horizontal field components, act as word line contacts for electrical connection, and contribute to the overall structural framework of the memory device. By combining these functions into a single element, the patent avoids adding separate shielding structures that would increase device complexity.
Solution Approach 2:
The patent merges the shielding function with the existing word line contact structure. The shield lines are integrated into the contact configuration between word lines and magnetic tunnel junctions, combining the electrical connection function with the magnetic shielding function in a single structural element, thereby minimizing additional complexity.
3Object-affected harmful factors
If magnetic material is used in shield lines, then protection against horizontal magnetic fields is improved, but manufacturing difficulty increases
Solution Approach 1:
The patent specifies using ferromagnetic materials with high saturation magnetization values (e.g., CoFeB, CoFe, Co, Fe, Ni, or their alloys) to maximize the shielding effect. By selecting materials with specific magnetic parameters and optimizing their composition, the shield lines achieve effective protection against horizontal magnetic fields while remaining compatible with standard semiconductor manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The shield lines reduce the impact of external magnetic fields on the magnetic tunnel junction, improving the electrical properties and reliability of the magnetic memory device while simplifying the fabrication process.
Implementation Method 1
The lower shield line and the upper shield line may include a magnetic material
Implementation Method 2
the shield lines reduce the impact of external magnetic fields on the magnetic tunnel junction
Implementation Method 3
The resistance of the magnetic tunnel junction pattern varies depending on magnetization directions of the two magnetic structures
Implementation Method 4
The magnetic tunnel junction pattern includes two magnetic structures and an insulation layer interposed therebetween
Data Source
AI summary
Disclosed is a magnetic memory device comprising a substrate, a conductive line on the substrate, a wiring dielectric layer that covers the conductive line, a lower shield line in the wiring dielectric layer and extending in a first direction, a data storage pattern that includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower shield line, and an upper shield line on the data storage pattern and extending in a second direction parallel to a top surface of the substrate. The second direction intersects the first direction. The lower shield line and the upper shield line include a magnetic material.