Magnetic Memory Element Strain Engineering Thermal Stability
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Solution Overview
Problem
The thermal stability of recorded magnetization in magnetic memory elements is compromised due to residual stress generated during semiconductor manufacturing, affecting the magnetic anisotropy energy and making it difficult to achieve the required thermal stability for MRAM applications.
Innovation Solution
By strategically controlling stress or strain in the ferromagnetic layers of the magnetic memory element, specifically through compressive stress applied in the easy magnetization axis direction, the magnetic anisotropy energy is increased, thereby enhancing the thermal stability of the magnetization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If residual stress is generated during semiconductor manufacturing, then manufacturing process is simplified, but thermal stability of recorded magnetization deteriorates
Solution Approach 1:
The patent converts the harmful residual stress generated during semiconductor manufacturing into a beneficial effect by applying compressive stress in the easy magnetization axis direction of the magnetic layer. This stress increases magnetic anisotropy energy, which in turn improves thermal stability of recorded magnetization. The approach transforms a manufacturing defect into a functional advantage that enhances MRAM performance.
2Reliability
If compressive stress is applied in easy magnetization axis direction, then magnetic anisotropy energy increases, but device structure becomes more complex
Solution Approach 1:
The patent utilizes stress that is already present in the semiconductor manufacturing process rather than introducing additional complex stress application mechanisms. By strategically orienting the easy magnetization axis to align with the direction of residual compressive stress, the device self-generates the required magnetic anisotropy enhancement without requiring external stress application apparatus or complex structural modifications.
3Reliability
If stress control is implemented to improve thermal stability, then manufacturing precision requirements increase, but process complexity increases
Solution Approach 1:
The patent changes the orientation parameter of the easy magnetization axis relative to the stress direction to optimize thermal stability. By controlling the crystal orientation and magnetization axis alignment during film deposition, the device achieves the required magnetic anisotropy enhancement through material parameter selection rather than requiring precise stress magnitude control, thereby reducing manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively improves the thermal stability of the magnetization, preventing inclination and ensuring the necessary stability for MRAM applications by actively utilizing stress or strain generated in the semiconductor manufacturing process.
Implementation Method 1
In a magnetic layer 20, stress or strain is generated in a semiconductor manufacturing process, and the stress or strain is actively used to improve thermal stability of magnetization
Implementation Method 2
The present invention relates to a magnetic memory element using a magnetoresistive effect
Data Source
AI summary
An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer (22), an insulating layer (21) that is formed on the first magnetic layer (22), and a second magnetic layer (20) that is formed on the insulating layer (21). At least one of the first magnetic layer (22) and the second magnetic layer (20) is strained and deformed so as to be elongated in an easy magnetization axis direction of the magnetic layer (22) or (20) or compressive strain (101) remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.