Magnetic Memory Sharing Switching Elements for Write Read Operations
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Solution Overview
Problem
Magnetic memory technologies using spin orbit torque or magnetic domain wall displacement require separate switching elements for writing and reading, leading to inefficient integration and increased area requirements.
Innovation Solution
A magnetic memory design that shares switching elements between storage elements, with a conductive layer extending in one direction and connected by conductive parts in another direction, allowing for efficient sharing of switching elements and improved integration characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate switching elements are used for writing and reading in magnetic memory, then the reliability of current control is improved, but the device area and integration density deteriorate
Solution Approach 1:
The patent merges the write current path and read current path by using the same switching element for both operations. The switching element is configured to selectively connect the storage element to either the write current line or the read current line, thereby eliminating the need for separate switching elements and reducing device area while maintaining reliable current control.
Solution Approach 2:
The switching element is designed with multi-functionality to perform both write and read operations. By controlling the switching element's state, the same component can route current for writing data or reading data, thus serving universal purposes and reducing the total number of components required in the memory device.
2Manufacturing precision
If multiple switching elements are provided for each storage element, then the control precision of read and write currents is improved, but the integration characteristics and area efficiency deteriorate
Solution Approach 1:
The patent combines multiple switching functions into a single switching element. The switching element is designed to handle both read and write current control with precise timing and state management, thereby maintaining control precision while improving integration characteristics by reducing the number of discrete components.
Solution Approach 2:
The switching element operates dynamically by changing its state based on the operation mode (read or write). The switching element can be controlled to connect to different current lines at different times, providing precise current control through dynamic state changes rather than requiring multiple static switching elements.
3Reliability
If separate current paths are used for writing and reading, then the operational reliability is improved, but the device complexity and area requirements worsen
Solution Approach 1:
The patent merges separate current paths into a unified current path that serves both write and read operations. The switching element acts as a router within this unified path, directing current flow based on the operation type. This reduces device complexity by eliminating redundant path structures while maintaining operational reliability through controlled current routing.
Solution Approach 2:
The switching element serves as an intermediary component that manages current flow between the storage element and different current lines. It mediates between the unified current path and the specific operation requirements, ensuring reliable current control without requiring separate dedicated paths for each operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances integration characteristics by allowing regular arrangement of switching elements without waste space, improving the efficiency of current flow and reducing the area required for each storage element.
Implementation Method 1
A spin orbit torque is induced by a pure spin current generated by a spin-orbit interaction or the Rashba effect at an interface between different materials
Implementation Method 2
A spin orbit torque is induced by a pure spin current generated by a spin-orbit interaction or the Rashba effect at an interface between different materials
Implementation Method 3
A giant magnetoresistance (GMR) element including a multilayer film of a ferromagnetic layer and a nonmagnetic layer, a tunneling magnetoresistance (TMR) element using an insulating layer (a tunnel barrier layer, a barrier layer) for an nonmagnetic layer
Implementation Method 4
A giant magnetoresistance (GMR) element including a multilayer film of a ferromagnetic layer and a nonmagnetic layer, a tunneling magnetoresistance (TMR) element using an insulating layer (a tunnel barrier layer, a barrier layer) for an nonmagnetic layer
Implementation Method 5
In a magnetic domain wall displacement type magnetic recording element, a resistance value is changed stepwise by moving the magnetic domain wall in the magnetic recording layer
Data Source
AI summary
A magnetic memory includes a storage element including a first ferromagnetic layer, a first conductive layer which faces the first ferromagnetic layer in a first direction and extends in a second direction different from the first direction, and a first conductive part and a second conductive part which are connected to the first conductive layer at positions which sandwich the first ferromagnetic layer in the second direction when seen in the first direction; and a plurality of first switching elements which are electrically connected to the first conductive part of the storage element.