Magnetic Memory Write Assist Voltage Reduces Error Rates
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Solution Overview
Problem
Current nonvolatile memories, such as SRAM and DRAM, face challenges with high power consumption, and magnetic memories, while faster and more energy-efficient, struggle with high write error rates, limiting their application in various systems.
Innovation Solution
A magnetic memory design incorporating a conductive wire with a first and second portion and a third portion in between, featuring a storage element with a first and second magnetic layer and a nonmagnetic layer, where a write current is applied between the first and second portions to reverse the magnetization direction of the first magnetic layer, assisted by a potential difference to reduce write errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If magnetic memory is used to replace working memory and storage memory, then power consumption is reduced and speed is improved, but write error rate increases
Solution Approach 1:
A write assist voltage is applied to the second magnetic layer before the write current is applied to the first magnetic layer. This preliminary action modifies the magnetic state of the second layer to facilitate more reliable magnetization reversal in the first layer, thereby reducing write errors while maintaining low power consumption
Solution Approach 2:
The invention changes the magnetic parameters of the second layer by applying a write assist voltage, which temporarily modifies its magnetization state. This parameter change creates more favorable conditions for writing data to the first layer, reducing write error rates without significantly increasing power consumption
2Productivity
If write current is applied to reverse magnetization direction, then data is written successfully, but write error rate increases
Solution Approach 1:
The second magnetic layer acts as an intermediary that is first modified by the write assist voltage. This intermediary modification then facilitates the write operation on the first magnetic layer, enabling more reliable data writing. The second layer mediates between the write current and the data storage process, reducing write errors
Solution Approach 2:
The write assist voltage is applied to the second magnetic layer in advance of the write current application. This preliminary modification of the second layer's magnetic state prepares the system for more reliable writing, reducing write errors while maintaining write operation effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces write error rates by controlling the magnetization direction of the first magnetic layer, enhancing the reliability and efficiency of magnetic memory operations while minimizing power consumption.
Implementation Method 1
a write current flowing between the first and second portions, reversing a magnetization direction of the first magnetic layer
Implementation Method 2
a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential
Data Source
AI summary
According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.