Nonvolatile Magnetic Memory Device with Local Young's Modulus Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Nonvolatile magnetic memory devices face challenges in achieving high thermal stability and low power consumption due to limitations in coercive force and write current, especially as device sizes are miniaturized.
Innovation Solution
Incorporating a layered structure with a recording layer and strategically placing regions of varying Young's modulus within the magnetoresistance effect element, such as a low Young modulus region and a high Young modulus region, to enhance coercive force and thermal stability, while reducing the critical current for magnetization inversion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the device size is miniaturized to increase integration density, then the area and volume are reduced, but the thermal stability and coercive force deteriorate
Solution Approach 1:
The patent applies local quality by creating regions with different Young's modulus values within the magnetoresistance effect element. Specifically, it introduces a low Young's modulus region and a high Young's modulus region at specific locations to locally enhance coercive force and thermal stability without increasing the overall device area, thus resolving the contradiction between miniaturization and stability maintenance.
Solution Approach 2:
The patent employs composite materials by combining regions with different mechanical properties (different Young's modulus values) within the magnetoresistance effect element. This composite structure allows the device to maintain high thermal stability and coercive force in a miniaturized form factor, as the different material regions work together to enhance overall performance without increasing device area.
2Stability of the object's composition
If the coercive force is increased to improve thermal stability, then the thermal stability improves, but the write current requirement increases
Solution Approach 1:
The patent uses local quality by strategically positioning low and high Young's modulus regions within the magnetoresistance effect element to locally enhance coercive force where needed. This localized enhancement improves thermal stability without requiring a uniform increase in coercive force across the entire device, thereby avoiding a proportional increase in write current requirements.
Solution Approach 2:
The patent applies parameter changes by modifying the Young's modulus distribution within the magnetoresistance effect element rather than uniformly increasing coercive force. By changing the mechanical property parameters (Young's modulus) in specific regions, the patent achieves improved thermal stability with a more efficient impact on write current requirements compared to uniform coercive force enhancement.
3Use of energy by moving object
If the write current is reduced to lower power consumption, then the power consumption decreases, but the magnetization inversion becomes unreliable
Solution Approach 1:
The patent applies local quality by introducing regions with different Young's modulus values to create localized enhancements in coercive force and magnetization inversion efficiency. This allows the device to achieve reliable magnetization inversion at lower write current levels, as the specific structural regions facilitate more efficient spin transfer torque effects, thereby reducing power consumption without sacrificing reliability.
Solution Approach 2:
The patent employs composite materials with different Young's modulus values to create a structure that enhances magnetization inversion efficiency. This composite structure enables reliable magnetization switching at lower current densities by optimizing the spin transfer torque effect in specific regions, thus achieving low power consumption while maintaining inversion reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the thermal stability and data retention characteristics of the nonvolatile magnetic memory device, allowing for lower power consumption and reduced write current requirements.
Implementation Method 1
a nonvolatile magnetic memory device according to another aspect of the invention includes a magnetoresistance effect element
Implementation Method 2
a magnetoresistance effect element applying spin-injection magnetization inversion
Implementation Method 3
recording by rotation of the magnetic moment
Data Source
AI summary
A nonvolatile magnetic memory device includes a magnetoresistance effect element that includes: a layered structure having a recording layer; a first wiring electrically connected to a lower part of the layered structure; a second wiring electrically connected to an upper part of the layered structure; and an interlayer insulation layer surrounding the layered structure. The magnetoresistance effect element further includes a low Young modulus region having a Young modulus lower than that of a material forming the interlayer insulation layer. The recording layer has an easy magnetization axis, and a hard magnetization axis orthogonal to the easy magnetization axis. When the magnetostriction constant λ of a material forming the recording layer is a positive value or a negative value, the low Young modulus region is disposed in an extension region of the easy magnetization axis or in an extension region of the hard magnetization axis of the recording layer, respectively.