Magnetic Nanowire Memory Misalignment Correction

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Solution Overview

Problem

Domain wall movement rates in magnetic nanowires vary, leading to differences in data retrieval times and complicating memory structures, making it difficult to produce inexpensive memory chips.

Innovation Solution

A memory system with a read unit, shift control unit, and read control unit that reads data from magnetic nanowires in parallel, detects misalignment due to varying domain wall movement speeds, and corrects data errors to ensure consistent data retrieval across all nanowires.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If domain wall movement is controlled in each magnetic nanowire to achieve consistent data retrieval, then data retrieval reliability is improved, but memory structure becomes complicated

Engineering Contradiction:

Improvedata retrieval reliabilityVSAvoidmemory structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent divides the memory system into multiple magnetic nanowires, each independently controllable for domain wall movement. By segmenting the control mechanism to operate on each nanowire independently rather than uniformly across all nanowires, the system achieves consistent data retrieval while maintaining a relatively simple overall structure.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent implements dynamic control of domain wall movement by applying current pulses of varying strengths to different magnetic nanowires based on their specific movement characteristics. This dynamic adjustment allows each nanowire to be optimized for consistent data retrieval without requiring complex structural modifications throughout the entire memory array.

Inventive Principle:

Principle #15Dynamics

2Productivity

If parallel domain wall movement is used to improve data retrieval speed, then productivity is improved, but data misalignment occurs due to varying movement rates

Engineering Contradiction:

Improvedata retrieval speedVSAvoiddata alignment precision

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent performs preliminary characterization of each magnetic nanowire's domain wall movement properties during manufacturing. This preliminary action enables the system to pre-determine optimal current pulse parameters for each nanowire, ensuring that when parallel movement occurs during data retrieval, all nanowires complete their domain wall movement simultaneously, thus maintaining data alignment precision while achieving high productivity.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent changes the control parameters (current pulse strength, duration, timing) for domain wall movement in different magnetic nanowires based on their individual movement rates. By adjusting these parameters dynamically during the read operation, the system maintains synchronized data retrieval across all nanowires, preventing misalignment while preserving parallel processing speed.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables reliable and efficient data retrieval by correcting misalignment issues, improving the reliability and cost-effectiveness of memory systems by standardizing data access across magnetic nanowires.

Implementation Method 1

The domain walls are moved by a current flowing through each magnetic nanowire in a direction in which the magnetic nanowire extends, thereby moving the magnetic domains

Methodology Applied

Scientific EffectDomain wall movement:

Implementation Method 2

The directions of magnetization in the magnetic domains correspond to '0' data and '1' data

Methodology Applied

Scientific EffectMagnetization detection:

Data Source

PatentUS9720772B2Memory system, method for controlling magnetic memory, and device for controlling magnetic memory

Publication Date: 2017.08.01 KIOXIA CORP

AI summary

A memory system according to an embodiment includes a plurality of magnetic nanowires, a read unit that reads data from the magnetic nanowires, a shift control unit that shifts domain walls in the magnetic nanowires, and a read control unit. The read control unit is configured to control the read unit to read the data from the magnetic nanowires in parallel, store two or more of the data read in parallel, and when the data corresponding to a first magnetic nanowire of the magnetic nanowires are delayed or advanced as compared to the data corresponding to a second magnetic nanowire of the magnetic nanowires, determines a misalignment in the data and correct the data based on the misalignment.