Magnetic Nonvolatile Memory Data Redirection Under Strong Magnetic Fields

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Solution Overview

Problem

Magnetic memories are vulnerable to strong magnetic fields, which can cause inappropriate magnetization and data corruption during writing operations, posing a challenge for reliable data storage in electronic devices.

Innovation Solution

An electronic device is configured with a magnetic nonvolatile memory and a non-magnetic nonvolatile memory, along with a processor that monitors magnetic field information. When a strong magnetic field is detected, the processor stops writing data to the magnetic memory and instead writes it to the non-magnetic memory, and vice versa when the magnetic field is weak.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If data is written to magnetic nonvolatile memory, then fast reading and writing with larger capacity is achieved, but the memory becomes vulnerable to strong magnetic fields causing data corruption

Engineering Contradiction:
Improvedata reading and writing speedVSAvoiddata storage reliability under magnetic field
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent introduces a non-magnetic nonvolatile memory as an intermediary storage medium. When a strong magnetic field is detected, the system temporarily redirects data writing from the magnetic memory to the non-magnetic memory, which acts as a protective mediator that cannot be affected by magnetic fields. After the magnetic field passes, the data is transferred back to the magnetic memory for permanent storage.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The system performs preliminary detection of magnetic fields using a magnetic field sensor before data writing operations. When a strong magnetic field is detected in advance, the system proactively switches the writing destination to non-magnetic memory, preventing data corruption before it can occur. This preliminary protective action ensures data integrity without requiring intervention after corruption occurs.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If magnetic field detection and switching mechanisms are added, then data protection is improved, but device complexity increases

Engineering Contradiction:
Improvedata storage reliabilityVSAvoidmemory management system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The non-magnetic nonvolatile memory serves multiple functions: it acts as a backup storage medium during magnetic field events, serves as regular storage for non-magnetic data, and provides a safety buffer that simplifies the overall system design. This multi-functionality reduces the need for specialized protective components while maintaining reliability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The system implements a feedback mechanism where the magnetic field sensor continuously monitors the magnetic environment and provides real-time information to the processor. Based on this feedback, the system automatically switches between magnetic and non-magnetic memory for data writing operations. This closed-loop control simplifies the protection mechanism by using automatic detection and response rather than complex manual or hardware-based protection circuits.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS12308062B2Electronic device, method for controlling storing operation, and storage medium
Publication Date: 2025.05.20 CASIO COMPUTER CO LTD
  • US12308062B2 patent drawing
  • US12308062B2 patent drawing

AI summary

An electronic device includes: a magnetic first nonvolatile memory that has no movable element; a non-magnetic second nonvolatile memory; and a processor. The processor is configured to execute processing including: stopping writing data onto the first nonvolatile memory but writing the data onto the second nonvolatile memory in response to determining, based on magnetic field information regarding a magnetic field around the electronic device, that the electronic device is on a magnetic field equal to or stronger than a reference magnetic field strength in writing the data onto the first nonvolatile memory; and writing the data of the second nonvolatile memory onto the first nonvolatile memory in response to determining, based on the magnetic field information, that the electronic device is not on the magnetic field and that the data is on the second nonvolatile memory.