Magnetic Recording Array With Opposite Writing Currents
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Solution Overview
Problem
MRAMs have insufficient data-reading speed due to the time required to obtain resistance values from multiple magnetoresistance effect elements.
Innovation Solution
A magnetic recording array with a configuration of multiple units, each comprising a first and second magnetoresistance effect element, a writing transistor, and specific wiring connections that allow opposite directions of writing currents, enabling series connection during writing and separate reading paths for high-speed data retrieval.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a conventional MRAM structure with single magnetoresistance effect elements is used, then the device complexity is low, but the data-reading speed is insufficient
Solution Approach 1:
The patent divides the memory structure into multiple units, each containing first and second magnetoresistance effect elements with separate reading paths. This segmentation allows simultaneous reading operations across multiple elements, increasing data-reading speed while maintaining manageable device complexity through modular architecture
Solution Approach 2:
The patent introduces a new dimensional aspect by creating separate reading paths for first and second magnetoresistance effect elements within each unit. This multi-path reading architecture enables parallel data retrieval operations, significantly improving reading speed without proportionally increasing device complexity
2Productivity
If multiple magnetoresistance effect elements are used in parallel, then the data-reading speed can be improved, but the time required to obtain resistance values of each element increases
Solution Approach 1:
The patent implements separate reading paths that are pre-configured for each magnetoresistance effect element. This preliminary structural arrangement allows reading operations to proceed simultaneously and independently for multiple elements, eliminating sequential measurement delays and reducing the total time required to obtain resistance values
Solution Approach 2:
The patent introduces separate reading paths as intermediary structures between the magnetoresistance effect elements and the reading circuitry. These dedicated reading paths enable simultaneous and independent measurement of multiple elements, improving productivity while minimizing the time loss associated with sequential reading
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration enhances data-reading speed by allowing simultaneous and efficient reading of multiple elements without the need for resistance value conversion, achieving high integration and reading speed.
Implementation Method 1
A resistance value of a magnetoresistance effect element varies depending on a difference in relative angle between directions of magnetizations of two magnetic layers sandwiching a nonmagnetic layer therebetween
Implementation Method 2
a spin-orbit torque magnetoresistance effect element utilizing spin-orbit torque (SOT)
Data Source
AI summary
A magnetic recording array includes a plurality of units. Each unit has a first magnetoresistance effect element, second magnetoresistance effect element, and writing transistor. Each of the first magnetoresistance effect element and the second magnetoresistance effect element has a wiring and a laminate which is laminated on the wiring. The writing transistor is connected to each of the wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element. The wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element are electrically connected in series at the time of writing, and a writing current flows through each of the wirings. A direction of a writing current flowing in the wiring of the first magnetoresistance effect element and a direction of a writing current flowing in the wiring of the second magnetoresistance effect element are opposite to each other.