Magnetic Resistance Device Using Intermetallic Compound Layers
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Solution Overview
Problem
Conventional magnetic resistance devices have limitations in achieving high magnetoresistive (MR) ratios, which are crucial for improving performance and integration density, particularly in high-density information storage and magnetic random access memory (MRAM) applications.
Innovation Solution
The use of intermetallic compounds or alloys for the pinned and free layers in a magnetic resistance device, along with a pinning layer, to enhance the MR ratio, where the intermetallic compounds are formed using co-sputtering and have structural formulas such as X2YZ or XYZ, with specific metals and anti-ferromagnetic materials, allowing for improved spin-dependent scattering and tunneling currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ferromagnetic materials (CoFe, NiFe) are used for pinned and free layers, then the device structure is simple and easy to manufacture, but the magnetoresistive (MR) ratio is limited and performance is insufficient
Solution Approach 1:
The patent employs intermetallic compounds (such as CoFeB, CoFeSiB, CoFeGeB) as composite materials for the pinned and free layers. These intermetallic compounds combine multiple elements with specific stoichiometric ratios to achieve high spin polarization and high MR ratio, resolving the contradiction between simple material composition and high performance requirements.
2Measurement precision
If high MR ratio is achieved using intermetallic compounds, then sensitivity and performance are improved, but the manufacturing process becomes more complex requiring co-sputtering techniques
Solution Approach 1:
The patent replaces conventional single-element sputtering with co-sputtering technology, which uses multiple target materials simultaneously to deposit intermetallic compound films. This substitution enables precise control of film composition and structure, achieving high spin polarization and high MR ratio while maintaining manufacturing feasibility through established physical vapor deposition processes.
3Manufacturing precision
If thin film deposition is performed in high-vacuum state to achieve few-nanometer thickness, then spin-spin interaction effects are observed, but the manufacturing process requires high vacuum conditions increasing process complexity
Solution Approach 1:
The patent utilizes high-vacuum environment during co-sputtering deposition to prevent oxidation and contamination of the intermetallic compound films. The inert vacuum atmosphere protects the sensitive thin film structure, enabling precise control of film thickness at the nanometer scale while maintaining high deposition quality and spin-dependent scattering properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases the MR ratio, enhancing the sensitivity and performance of magnetic resistance devices, enabling higher integration density and improved information storage capabilities.
Implementation Method 1
This structure utilizes a principle that when an electron passes through the ferromagnetic layers, a resistance value varies according to a spin arrangement of the two magnetic layers. This phenomenon can be explained by spin-dependent scattering.
Implementation Method 2
A TMR structure is generally formed of a sequential stack of a ferromagnetic body/an insulating layer, i.e., a tunnel barrier layer/a ferromagnetic body. In this structure, the insulating layer is interposed between two ferromagnetic bodies so that a tunneling current varies according to the relative magnetic directions of the ferromagnetic bodies.
Data Source
AI summary
In a magnetic resistance device, and a method of manufacturing the same, the magnetic resistance device includes a pinning layer, a pinned layer, a nonmagnetic layer, and a free layer stacked on one another, at least one of the pinned layer and the free layer being formed of an intermetallic compound.