Magnetic Shield Member for Plasma Processing Apparatus
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional plasma processing apparatuses experience instability and damage due to high-density plasma and magnetic field formation in gaps between the target electrode, insulating member, and shield, leading to non-uniform film deposition and processing defects.
Innovation Solution
A magnet mechanism with a magnetic shield member, made from high magnetic permeability materials like SUS 430, is positioned to suppress the magnetic field formation in the gaps between the target electrode and the shield, ensuring a uniform magnetic field distribution up to the periphery of the target electrode while preventing field formation in critical gaps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a magnet mechanism forms a magnetic field for generating plasma, then plasma density increases and film deposition rate improves, but magnetic field formation in gaps causes high-density plasma concentration leading to charge damage and processing instability
Solution Approach 1:
A magnetic shield member made of high magnetic permeability material (e.g., SUS 430) is introduced as an intermediary element between the magnet mechanism and the gaps. This shield member selectively guides and suppresses magnetic field formation in the gaps while allowing necessary magnetic field penetration for plasma generation in the processing chamber, thereby preventing charge concentration damage without compromising film deposition rate
Solution Approach 2:
The magnetic shield member is positioned specifically at critical locations where gaps exist between the target electrode, insulating member, and shield. This localized placement ensures that magnetic field suppression is applied only where needed (in the gaps) while maintaining appropriate magnetic field distribution in the overall processing chamber for uniform plasma generation
2Manufacturing precision
If magnets are arranged to form uniform plasma density across target electrode surface, then film thickness uniformity improves, but magnetic field penetration to periphery becomes insufficient
Solution Approach 1:
The magnetic shield member extends in the vertical dimension (thickness direction) and is strategically positioned to influence magnetic field distribution in three-dimensional space. This dimensional approach allows the shield to guide magnetic field lines to achieve both uniform plasma density across the target surface and sufficient field penetration to the periphery
3Object-affected harmful factors
If a shield is provided to prevent film adhesion, then contamination is reduced, but magnetic field formation in gaps between shield and electrode causes arcing and damage
Solution Approach 1:
The magnetic shield member acts as an intermediary magnetic field management element that works in conjunction with the physical shield. It suppresses magnetic field formation in the gaps between the shield and electrode, preventing the conditions that lead to arcing and charge concentration damage, while allowing the physical shield to continue preventing film adhesion contamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for uniform film thickness and stable processing by preventing high-density plasma generation in gaps, thus eliminating charge concentration damage and processing instability, while maintaining a necessary magnetic field for sputtering film deposition.
Implementation Method 1
A magnet mechanism with a magnetic shield member, made from high magnetic permeability materials like SUS 430, is positioned to suppress the magnetic field formation in the gaps between the target electrode and the shield
Implementation Method 2
a magnet mechanism forming a magnetic field for generating plasma
Implementation Method 3
a magnet mechanism forming a magnetic field for generating plasma
Implementation Method 4
When using such a conventional plasma processing apparatus for a sputtering process
Data Source
AI summary
A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.