Magnetic Shielding Layer for MRAM Interference Reduction
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Solution Overview
Problem
Magnetic sensitive electrical devices, such as MRAM chips, experience operational failures and data errors due to external magnetic fields, which existing technologies fail to adequately mitigate.
Innovation Solution
A magnetic shielding layer, composed of materials like CoFe and Si, is strategically positioned around semiconductor chips to redirect magnetic flux and reduce interference, potentially including tri-layer or multi-layer structures with insulating layers to minimize eddy currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If no magnetic shielding layer is used, then the device structure remains simple and manufacturing cost is low, but magnetic sensitive devices experience operational failures and data errors due to external magnetic fields
Solution Approach 1:
A magnetic shielding layer is introduced as an intermediary component between external magnetic fields and magnetic sensitive devices. This layer redirects magnetic flux away from the devices, protecting them from harmful magnetic interference while maintaining operational reliability
Solution Approach 2:
The magnetic shielding layer is constructed using composite material structures, such as tri-layer configurations combining magnetic shielding materials with insulating layers. This approach optimizes magnetic flux redirection while minimizing eddy current effects, achieving effective shielding without excessive complexity
2Object-affected harmful factors
If a magnetic shielding layer is added, then magnetic interference is reduced and bit error rates decrease, but the device structure becomes more complex and manufacturing process is more difficult
Solution Approach 1:
The magnetic shielding layer is divided into multiple segments or layers, such as tri-layer structures with alternating magnetic and insulating layers. This segmentation allows each layer to perform its specific function optimally while simplifying the overall manufacturing process through modular construction
Solution Approach 2:
The magnetic shielding layer is strategically positioned and configured with varying properties at different locations. For example, the layer density, thickness, and material composition are optimized for specific regions based on local magnetic field conditions, achieving effective shielding while reducing unnecessary material usage and simplifying manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic shielding layer significantly reduces bit error rates and protects magnetic sensitive devices from magnetic interference, achieving a reduction of up to six orders of magnitude in bit error rates compared to unshielded devices.
Implementation Method 1
The magnetic shielding layer may reduce interference at the semiconductor chip caused by an external magnetic field
Implementation Method 2
The magnetic shielding layer may include a tri-layer structure that includes a first magnetic layer, a first insulating layer, and a second magnetic layer
Data Source
AI summary
Devices and methods are provided in which a magnetic sensitive semiconductor chip, such as a magnetoresistive random-access memory (MRAM) chip, is shielded from magnetic interference by a magnetic shielding layer. A device includes a housing that defines an exterior surface. A semiconductor chip is disposed within the housing, and the semiconductor chip is spaced apart from the exterior surface of the housing. A magnetic shielding layer is spaced apart from the semiconductor chip by a distance less than 5 mm.