Magnetic Sidewalls for MRAM Write Lines
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Solution Overview
Problem
Field-induced magnetic random access memory (MRAM) devices require high current to write data, leading to higher energy and voltage demands, which affects memory density and reliability of metal lines.
Innovation Solution
Incorporating magnetic sidewalls on word and bit lines, either continuous or discontinuous, to reduce the current needed for switching magnetic tunnel junction (MTJ) cells, with manufacturing techniques involving etching and deposition methods to optimize sidewall configuration and material properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high current is used to write data in MRAM cells, then data writing is achieved, but energy consumption increases and metal line reliability deteriorates
Solution Approach 1:
The patent changes the magnetic properties of the metal lines by adding magnetic sidewalls, transforming them from non-magnetic to magnetic conductors. This parameter change enables the lines to generate sufficient magnetic field for writing at lower currents, resolving the contradiction between reliability and energy consumption
Solution Approach 2:
The patent creates a composite structure by combining non-magnetic metal lines with magnetic sidewall materials. This composite approach allows the system to benefit from both the electrical conductivity of metal lines and the magnetic field generation capability of the sidewalls, reducing writing current requirements
2Reliability
If high current is used to write data in MRAM cells, then data writing is achieved, but voltage requirements increase
Solution Approach 1:
By changing the magnetic permeability parameter of the metal lines through the addition of magnetic sidewalls, the system can achieve the required magnetic field strength at lower voltage levels, directly addressing the voltage requirement issue
3Force
If continuous magnetic sidewalls are used on metal lines, then magnetic field generation is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the magnetic sidewalls into discontinuous portions rather than continuous coverage. This segmentation maintains the essential magnetic field generation function while significantly simplifying the manufacturing process by reducing material deposition complexity and enabling better integration with existing CMOS fabrication steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of magnetic sidewalls reduces the current required for writing data in MRAM cells, lowering energy consumption, enhancing memory density, and improving the reliability of metal lines, while maintaining cell stability and switching performance.
Implementation Method 1
Field-induced magnetic random access memory (MRAM) use a current-induced magnetic field generated around metal lines to write data in memory cells
Data Source
AI summary
In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.