Magnetic Spacer for Stray Field Shielding in MRAM
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Solution Overview
Problem
There is a need for semiconductor devices that can enhance the magnetic resistance characteristics while preventing stray magnetic fields from affecting the free magnetization layer, which existing technologies have not adequately addressed.
Innovation Solution
The semiconductor device includes a magnetization-pinned layer with a non-magnetic layer interposed between two magnetic layers, a free magnetization layer separated from the pinned layer, and a magnetic spacer that contacts the pinned layer but not the free layer, enhancing exchange coupling and shielding stray magnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the magnetization-pinned layer is formed close to the free magnetization layer to reduce device size, then the device area is reduced, but stray magnetic fields from the pinned layer affect the free layer, degrading magnetic resistance characteristics
Solution Approach 1:
A magnetic spacer layer is introduced between the magnetization-pinned layer and the free magnetization layer. This intermediary layer shields the free layer from stray magnetic fields generated by the pinned layer, preventing magnetic field interference while allowing the layers to be positioned close together, thus maintaining small device area while preserving magnetic resistance characteristics.
2Object-affected harmful factors
If the magnetic spacer is formed to contact both the magnetization-pinned layer and the free magnetization layer, then the shielding effect is enhanced, but exchange coupling between magnetic layers is weakened
Solution Approach 1:
The magnetic spacer is designed with non-uniform thickness: it is thinner at the region contacting the magnetization-pinned layer to maintain exchange coupling, and thicker at the region facing the free magnetization layer to enhance stray magnetic field shielding. This local variation in thickness allows simultaneous optimization of both exchange coupling and magnetic field shielding effects.
3Reliability
If the non-magnetic layer thickness is increased to separate magnetic layers, then exchange coupling is reduced, but if decreased, then stray magnetic fields affect the free layer
Solution Approach 1:
The magnetic spacer acts as a mediator that replaces the need for a thick non-magnetic layer. By introducing this spacer, the non-magnetic layer can remain thin to preserve exchange coupling, while the spacer provides the necessary shielding against stray magnetic fields, thus resolving the trade-off between exchange coupling strength and magnetic field interference.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the magnetic resistance characteristics of the variable resistance element by shielding stray magnetic fields and enhancing exchange coupling, leading to improved performance in electronic devices.
Implementation Method 1
a magnetic spacer configured to come in contact with a side of the first magnetic layer and at least part of a side of the second magnetic layer... preventing a stray magnetic field produced by the magnetization-pinned layer from affecting the free magnetization layer
Implementation Method 2
a magnetization-pinned layer configured to include a first magnetic layer, a second magnetic layer, and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer... enhancing the exchange coupling of the magnetization-pinned layer
Data Source
AI summary
An electronic device in accordance with this technology includes semiconductor memory. The semiconductor memory may include a magnetization-pinned layer configured to include a first magnetic layer, a second magnetic layer, and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, a free magnetization layer spaced apart from the magnetization-pinned layer, a tunnel barrier layer interposed between the magnetization-pinned layer and the free magnetization layer, and a magnetic spacer configured to come in contact with a side of the first magnetic layer and at least part of a side of the second magnetic layer.