Magnetic Storage Element Domain Wall Control
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Solution Overview
Problem
Conventional spin shift register memories require high current densities for domain wall shifting, leading to high power consumption and instability, making it challenging to achieve reliable and efficient large-capacity magnetic storage.
Innovation Solution
A magnetic storage element with a magnetic thin wire and an assisting unit, such as a wiring or spin wave generator, that applies a current and magnetic field to increase domain wall widths, allowing for lower current and more stable domain wall movement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high current density is applied to shift domain walls in conventional spin shift register memories, then domain wall movement is achieved, but power consumption increases and operation stability deteriorates
Solution Approach 1:
A magnetic layer is introduced as an intermediary component between the current path and the domain wall. The magnetic layer generates a magnetic field that assists domain wall movement, allowing the system to achieve the same effect with lower current density. This intermediary magnetic field mediates the interaction between electrical current and magnetic domains, reducing the direct burden on the current and improving both energy efficiency and operational stability.
2Quantity of substance
If the physical length of the shift register is increased to accommodate more bits for large-capacity memory, then memory capacity increases, but false operations due to current pulse waveform rounding become more likely
Solution Approach 1:
The patent replaces part of the electrical current-driven domain wall shifting mechanism with a magnetic field-driven approach. By using a magnetic layer to generate assisting magnetic fields, the system reduces dependence on high-current pulses for long-distance domain wall movement. This substitution of magnetic field assistance for pure electrical driving reduces waveform rounding effects and maintains operation accuracy even in extended shift registers with hundreds or thousands of bits.
3Use of energy by moving object
If critical current is reduced to lower power consumption, then energy efficiency improves, but domain wall movement stability deteriorates
Solution Approach 1:
The patent changes the magnetic field parameters by introducing a magnetic layer with specific magnetic properties. This magnetic layer provides an additional magnetic field component that supplements the field generated by the driving current. By adjusting the magnetic layer's characteristics (such as saturation magnetization and thickness), the system can achieve stable domain wall movement at lower current densities, effectively decoupling the relationship between critical current and movement stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient and stable domain wall movement with reduced current density, improving memory reliability and power efficiency for large-capacity storage.
Implementation Method 1
an assisting unit, such as a wiring or spin wave generator, that applies a current and magnetic field to increase domain wall widths
Data Source
AI summary
A magnetic storage element according to an embodiment includes: a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls; an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire.