Magnetic Wall Analog Memory Device Using Spin-Orbit Torque
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Solution Overview
Problem
Conventional magnetic wall driving type MRAMs require two magnetization fixed layers for operation, which complicates manufacturing and limits the ability to form stable magnetic walls for high-density memory devices.
Innovation Solution
A magnetic wall utilization type analog memory device is developed that eliminates the need for one of the two magnetization fixed layers by using spin-orbit torque wiring or magnetic field application wiring to supply magnetization to the magnetic wall driving layer, allowing for magnetization reversal without the need for fixed magnetization supply layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If two magnetization fixed layers are used in conventional magnetic wall driving type MRAM, then stable magnetization supply is achieved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent extracts and removes one of the two magnetization fixed layers from the conventional MRAM structure. By eliminating the second magnetization fixed layer (layer 115) and its associated magnetization supply layer, the device complexity is reduced while the remaining fixed layer (layer 111) continues to provide stable magnetization reference for the magnetic wall driving layer.
Solution Approach 2:
The patent makes the magnetic wall driving layer itself serve multiple functions: it acts as both the layer where magnetic walls are driven for data storage and as a dynamic magnetization source that can supply magnetization in either direction. This eliminates the need for a separate second magnetization supply layer, reducing structural complexity while maintaining functionality.
2Ease of operation
If two magnetization fixed layers are used in conventional magnetic wall driving type MRAM, then magnetization reversal is enabled, but manufacturing process complexity increases
Solution Approach 1:
The patent removes the second magnetization fixed layer and its associated manufacturing steps from the conventional structure. This extraction simplifies the manufacturing process by reducing the number of layers that need to be deposited, patterned, and aligned, while the magnetic wall driving layer's bidirectional magnetization capability is maintained through spin-orbit torque or magnetic field application.
3Quantity of substance
If conventional magnetic wall driving type MRAM structure is used, then data recording function is achieved, but storage density is limited due to structural complexity
Solution Approach 1:
By extracting and removing redundant layers (the second magnetization fixed layer and associated supply layers), the patent reduces the overall device footprint and layer complexity. This enables higher storage density as fewer layers need to be stacked vertically, allowing for more compact cell designs and increased capacity per chip area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the creation of a magnetic wall utilization type analog memory device that reduces manufacturing complexity and allows for stable multi-value recording and reading, enhancing the storage capacity and efficiency of memory devices.
Implementation Method 1
at least one of the first magnetization supplying part and the second magnetization supplying part is a spin-orbit torque wiring which comes into contact with the magnetic wall driving layer
Implementation Method 2
at least one of the first magnetization supplying part and the second magnetization supplying part is a magnetic field application wiring which is electrically insulated from the magnetic wall driving layer
Implementation Method 3
a magnetoresistive sensor part including a magnetization fixed layer having a magnetization oriented in a first direction, a non-magnetic layer provided on one side of the magnetization fixed layer, a magnetic wall driving layer provided on the magnetization fixed layer with the non-magnetic layer interposed therebetween
Data Source
AI summary
A magnetic wall utilization type analog memory device includes a magnetization fixed layer having a magnetization oriented in a first direction, a non-magnetic layer provided on one side of the magnetization fixed layer, a magnetic wall driving layer provided on the magnetization fixed layer with the non-magnetic layer interposed therebetween, a first magnetization supplying part which is configured to supply magnetization oriented in the first direction to the magnetic wall driving layer and a second magnetization supplying part which is configured to supply magnetization oriented in a second direction reversed with respect to the first direction, wherein at least one of the first magnetization supplying part and the second magnetization supplying part is a spin-orbit torque wiring which comes into contact with the magnetic wall driving layer and extends in a direction intersecting the magnetic wall driving layer.