Notch-Free Magnetic Wire Domain Wall Control
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Solution Overview
Problem
The development of semiconductor devices using magnetic domain wall movement is hindered by the difficulty in stabilizing the movement of magnetic domain walls without using artificial notches, which are challenging to form uniformly and consistently.
Innovation Solution
A semiconductor device with a notch-free magnetic wire that utilizes a pulse field or pulse current to move magnetic domain walls, with specific intensity and timing to ensure stable movement, allowing for precise control of magnetic domain wall oscillation without the need for notches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If artificial notches are used to stabilize magnetic domain wall movement, then the stability of magnetic domain wall movement is improved, but the manufacturing complexity and difficulty increase due to the challenge of forming notches uniformly and consistently
Solution Approach 1:
The invention extracts and eliminates the artificial notches from the magnetic wire structure, replacing them with naturally formed magnetic domain walls that stabilize themselves through magnetic interactions. This removes the manufacturing complexity of forming precise notches while maintaining stability through the inherent magnetic domain structure.
Solution Approach 2:
The invention changes the control parameter from physical structural modifications (notches) to magnetic field parameters (pulse field intensity and timing). By controlling the pulse field applied to the magnetic wire, the magnetic domain walls can be stabilized and controlled without requiring precise physical notches, thus improving manufacturing uniformity.
2Stability of the object's composition
If artificial notches are used to stabilize magnetic domain wall movement, then the stability of magnetic domain wall movement is improved, but the device complexity increases due to the additional structural elements required
Solution Approach 1:
The invention removes the artificial notches from the device structure, simplifying the magnetic wire to a uniform structure without additional geometric features. The stability function is transferred from the physical notch structure to the magnetic domain wall dynamics controlled by pulse fields.
Solution Approach 2:
The magnetic domain walls in the notch-free wire serve their own stabilization function through magnetic interactions and pulse field control, eliminating the need for external structural elements (notches) to provide stabilization. The system uses its inherent magnetic properties rather than added structural components.
3Duration of action of moving object
If conventional continuous field or current is used to move magnetic domain walls, then the movement can be maintained, but the precision of controlling magnetic domain wall position and oscillation decreases
Solution Approach 1:
The invention uses periodic pulse fields with specific timing and duration to control magnetic domain wall movement. Instead of continuous application, the pulsed nature allows precise control of when and how the domain walls move, enabling accurate positioning and oscillation control while maintaining movement continuity through repeated pulses.
Solution Approach 2:
The invention transitions from static continuous field control to dynamic pulsed field control. The pulse timing, duration, and intensity can be dynamically adjusted to precisely control the magnetic domain wall oscillation and position, enabling accurate data bit representation while maintaining continuous movement capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the stable movement of magnetic domain walls by unit of 1 bit, enhancing the reliability and uniformity of semiconductor devices, facilitating mass production and reproducibility by eliminating the complexity of notch formation.
Implementation Method 1
the magnetic wire comprises a magnetic domain wall which is moved by one of a pulse field and a pulse current
Implementation Method 2
A magnetic domain wall is a boundary portion of a magnetic domain having a magnetization direction different from another magnetic domain. The magnetic domain wall can be moved by an external magnetic field or by a current applied to a magnetic substance.
Data Source
AI summary
A semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not require an additional notch since the magnetic wire includes a magnetic domain wall, the moving distance of which is controlled by a pulse field or a pulse current.