Magnetically Enhanced Mold Compound for RF Inductors
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Solution Overview
Problem
Silicon on insulator (SOI) substrates face limitations in radio-frequency (RF) applications due to harmonic generations and low resistivity, leading to unwanted signal degradation and reduced performance of inductive elements, while high-density semiconductor dies generate excessive heat, necessitating improved microelectronics package designs that enhance inductance, quality factor, and heat dissipation without increasing package size.
Innovation Solution
A microelectronics package with a thinned flip-chip die and a magnetically enhanced mold compound component, where the inductive element is embedded in the device layer and the magnetically enhanced mold compound is formed over the first surface portion, while a regular mold compound is formed over the second surface portion, enhancing inductance and heat dissipation without covering the inductive element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If SOI substrates are used in RF applications, then low cost and large scale production capacity are achieved, but harmonic generation and low resistivity cause unwanted signal degradation and reduced quality factor of inductive elements
Solution Approach 1:
The patent segments the mold compound into two distinct portions: a first mold compound portion positioned over the inductive element and a second mold compound portion positioned over other circuit elements. This segmentation allows the first portion to provide magnetic enhancement for improved inductance and quality factor, while the second portion provides standard encapsulation and heat dissipation, thereby resolving the contradiction between maintaining SOI substrate productivity and improving RF signal quality.
Solution Approach 2:
The patent applies local quality by providing magnetic enhancement only in the region where it is needed (over the inductive element) rather than throughout the entire package. The first mold compound portion contains magnetic particles to enhance inductance and quality factor locally, while the second portion uses standard material for other functions, thus improving RF performance without compromising the overall productivity and cost-effectiveness of SOI substrate manufacturing.
2Productivity
If high density transistor integration is implemented, then device functionality and speed are improved, but heat generation increases significantly
Solution Approach 1:
The patent applies local quality by providing magnetic enhancement only in the region where it is needed (over the inductive element) rather than throughout the entire package. The first mold compound portion contains magnetic particles to enhance inductance and quality factor locally, while the second portion uses standard material for other functions, thus improving RF performance without compromising the overall productivity and cost-effectiveness of SOI substrate manufacturing.
Solution Approach 2:
The mold compound serves as an intermediary thermal management solution, with the second portion providing heat dissipation pathways and thermal coupling to the substrate. This intermediary structure enables effective heat removal from high-density transistor regions without requiring fundamental changes to the SOI substrate manufacturing process, thereby maintaining productivity while managing thermal issues.
3Temperature
If package size is increased to accommodate heat dissipation structures, then heat management is improved, but device portability and integration density are reduced
Solution Approach 1:
The mold compound is designed to perform multiple functions simultaneously: the first portion provides magnetic enhancement for improved inductance and quality factor, while both portions provide encapsulation, mechanical support, and thermal management. This multi-functionality eliminates the need for separate dedicated heat dissipation structures that would increase package area, thereby maintaining portability and integration density while effectively managing heat from high-density transistor regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly improves the quality factor and inductance value of inductive elements and enhances heat dissipation, addressing the limitations of SOI substrates in RF applications and managing increased heat generation in high-density semiconductor dies.
Implementation Method 1
a magnetically enhanced mold compound component formed over the first surface portion, wherein the magnetically enhanced mold compound component increases an inductance value of the inductive element
Implementation Method 2
the relatively low resistivity encountered in the silicon handle layer limits the performance and quality factor of inductive elements embedded in the semiconductor dies, such as inductors, transmission lines and couples, by the generation of unwanted RF current loss in the silicon handle layer
Implementation Method 3
The amount of heat generated by the semiconductor dies will increase significantly due to the large number of transistors integrated on the semiconductor dies, the large amount of power passing through the transistors, and the high operation speed of the transistors
Data Source
AI summary
The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. The thinned flip-chip die is attached to the module substrate and includes a device layer with an inductive element embedded therein. Herein, the inductive element is underlying the first surface portion and not underlying the second surface portion. The magnetically enhanced mold compound component is formed over the first surface portion. The mold compound component is formed over the second surface portion, not over the first surface portion, and surrounding the magnetically enhanced mold compound component.