Magneto-ionic Device With Solid State Proton Pump
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Solution Overview
Problem
Current spintronic devices lack a robust approach for electrically gating magnetism, requiring large dynamic range, fast response, and long operating lifetime, with existing methods exhibiting deficiencies such as limited magnetic anisotropy modulation and chemical/structural degradation.
Innovation Solution
A hydrogen-gated magneto-ionic device that uses a proton conductor to transport protons to a magnetic layer, where they reduce to hydrogen, altering magnetic anisotropy without chemical or structural changes, enabling reversible switching between magnetic states at relatively low gate voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If redox-based magneto-ionic approaches are used to modulate magnetic anisotropy, then significant changes in magnetic properties are achieved, but chemical and structural degradation occurs
Solution Approach 1:
The patent introduces a proton conductor layer as an intermediary between the electrode and magnetic layer. This mediator allows proton transport to modulate magnetic anisotropy without direct chemical contact between the electrode and magnetic layer, preventing chemical degradation while achieving significant magnetic property changes through hydrogen insertion/extraction
Solution Approach 2:
The patent changes the operational mechanism from redox reactions to proton transport and hydrogen insertion. By controlling the concentration of hydrogen in the magnetic layer through proton conductor-mediated transport, the magnetic anisotropy is modulated without causing structural degradation, achieving both significant property changes and material stability
2Use of energy by moving object
If conventional electronic devices are used, then device operation is simple, but power consumption is high and switching times are slow
Solution Approach 1:
The patent utilizes spin as an additional degree of freedom beyond electrical charge. By controlling electron spin states in addition to charge, the device achieves lower power consumption and faster switching times, as spin manipulation requires less energy and can occur on shorter timescales than conventional charge-based switching
3Reliability
If magnetoelectric-based approaches are used, then device operation is achieved, but the change in magnetic anisotropy is limited
Solution Approach 1:
The patent employs a proton conductor as an intermediary that simplifies the mechanism for achieving large magnetic anisotropy changes. The proton conductor enables direct proton transport to the magnetic layer, where hydrogen insertion causes significant magnetic property changes without requiring complex magnetoelectric coupling mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hydrogen-gated approach provides significant changes in magnetic anisotropy with reduced degradation, faster switching speeds, and longer operating lifetimes compared to previous methods, suitable for spintronic devices and memory applications.
Implementation Method 1
A first gate voltage is applied to the first electrode and the second electrode to transport protons from the second electrode through the proton conductor toward the magnetic layer
Implementation Method 2
where the protons then reduce to hydrogen via a hydrogen evolution reaction. The presence of hydrogen proximate to the magnetic layer causes the magnetic layer to transition between at least two magnetic states
Implementation Method 3
When the positive gate voltage is removed or a negative gate voltage is applied, the reverse process occurs where the hydrogen splits into protons and electrons and the protons are removed from the magneto-ionic device
Data Source
AI summary
A spintronic device controls both the electrical charge and the spin of electrons to transmit, process, and store information. The control of electron spin provides additional degrees of freedom to modify the electric and magnetic properties of materials such as magnetic anisotropy. However, the development and integration of spintronic devices has been limited, in part, by the lack of a robust approach to electrically gate magnetism. Conventional approaches to gating magnetism either exhibit impractically small changes to the properties of a magnet or limited operating lifetime due to material degradation. Here, a magneto-ionic device operates using a hydrogen-gated magneto-ionic mechanism to overcome these shortcomings. A gate voltage applied to the magneto-ionic device causes protons to move towards a magnetic layer where the protons reduce to hydrogen. The presence of hydrogen and protons leads to large changes in the magnetic layer without degradation. This voltage-induced process is reversible.