Magneto-Optical Current Sensing for Transient Semiconductor Monitoring

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Solution Overview

Problem

Existing semiconductor module monitoring technologies struggle to detect dynamic events, particularly transient switching procedures, without significantly affecting the semiconductor elements and their peripheral equipment.

Innovation Solution

Employing a magneto-optical sensor with a thin film layer, such as garnet, to measure current by reflecting or transmitting polarized light signals, which are then converted into electrical signals to determine current density, using the Faraday or Kerr effect, while being electrically isolated from the semiconductor elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional sensors are used to monitor semiconductor elements, then measurement capability is provided, but the sensors significantly affect the semiconductor elements and their peripheral equipment

Engineering Contradiction:

Improvecurrent measurement capabilityVSAvoidinterference with semiconductor elements

Core Design Contradiction:

Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a magneto-optical sensor that acts as an intermediary measurement device. Instead of directly contacting semiconductor elements, the sensor detects magnetic fields generated by current flow through the feed lines. This indirect measurement approach allows current monitoring while completely avoiding electrical interference with the semiconductor elements and their peripheral equipment.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces conventional electrical sensors with a magneto-optical sensing system that uses optical fields instead of electrical fields. The sensor utilizes the Faraday effect or Kerr effect to convert magnetic field information into optical signal changes, thereby substituting electrical measurement mechanisms with optical ones to eliminate harmful electrical interactions.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If conventional sensors are used to detect dynamic events, then monitoring is provided, but rapid response to transient switching procedures is insufficient

Engineering Contradiction:

Improvedetection of dynamic eventsVSAvoidresponse time to transient events

Core Design Contradiction:

ReliabilityVSSpeed

Solution Approach 1:

The patent replaces slow electrical sensing mechanisms with optical detection based on magneto-optical effects. Optical fields respond instantaneously to magnetic field changes, enabling the sensor to capture transient switching procedures and dynamic events in real-time without the response delays inherent in conventional electrical sensors.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Measurement precision

If electrical sensors are used for current measurement, then current determination is achieved, but electrical isolation from semiconductor elements is compromised

Engineering Contradiction:

Improvecurrent determination accuracyVSAvoidelectrical isolation

Core Design Contradiction:

Measurement precisionVSReliability

Solution Approach 1:

The magneto-optical sensor serves as an electrical isolation intermediary by detecting magnetic fields that penetrate through non-conductive barriers. The sensor can be positioned on the housing or substrate without electrical connection to the semiconductor elements, maintaining complete electrical isolation while accurately determining current through magnetic field measurement.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables rapid and accurate detection of transient current signals with minimal interference, allowing early detection of anomalies that could lead to component failure, while maintaining the integrity of the semiconductor elements and reducing installation space.

Implementation Method 1

a polarized light signal is reflected by the magneto-optical sensor, wherein a current is determined from a polarization of the reflected light signal

Methodology Applied

Scientific EffectFaraday effect: Faraday Effect

Implementation Method 2

a polarized light signal is reflected by the magneto-optical sensor, wherein a current is determined from a polarization of the reflected light signal

Methodology Applied

Scientific EffectKerr effect: Magneto-Optic Kerr Effect

Data Source

PatentUS12540954B2Magneto-optical sensor for monitoring of a semiconductor element in a semiconductor module

Publication Date: 2026.02.03 SIEMENS AG

AI summary

A magneto-optical sensor monitors a semiconductor element in a semiconductor module. The magneto-optical sensor is arranged in a region of the semiconductor element or of at least one of the feed lines of the semiconductor module that make contact with the semiconductor element. A polarized light signal is reflected from the magneto-optical sensor or transmitted through the magneto-optical sensor. A current is determined from a polarization of the reflected or transmitted light signal.