Magneto-resistance Element with Functional Layer and Current Confining Spacer
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Solution Overview
Problem
Conventional magneto-resistance effect elements with metallic spacer layers face challenges in detecting small magnetic fields due to limited resistance change, and existing oxide layer-based CPP elements require enhanced sensitivity to improve MR ratio and reproducing characteristics.
Innovation Solution
Incorporating a functional layer with elements like Si, Mg, or Al in the fixed or free magnetization layers, and a metallic layer adjacent to the current confining layer to enhance the spin-dependent scattering effect and prevent oxygen diffusion, thereby stabilizing the free magnetization layer and increasing the MR ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a metallic spacer layer is used in conventional spin valve films, then the structure is simple and manufacturing is easier, but the change in resistance is small making detection of small magnetic fields difficult
Solution Approach 1:
The patent employs a composite spacer layer structure combining insulating oxide layers (such as Al2O3, MgO) with metallic layers containing current confining paths. This composite structure increases the magneto-resistance effect and detection sensitivity while maintaining manufacturability through established sputtering and oxidation processes.
Solution Approach 2:
The patent introduces current confining paths within the metallic layer that locally concentrate current flow. This creates regions of high current density that enhance the magneto-resistance effect specifically where needed, improving detection sensitivity without requiring complete structural redesign.
2Measurement precision
If an oxide layer is used as spacer layer in CPP elements, then the MR ratio can be increased, but the sensitivity and reproducing characteristics require further enhancement
Solution Approach 1:
The patent creates a composite structure where oxide spacer layers are combined with metallic layers containing current confining paths. This hybrid approach leverages the high MR ratio advantage of oxide layers while the metallic current confining paths provide stable current distribution, thereby improving reproducing characteristics and sensitivity.
Solution Approach 2:
The metallic layer with current confining paths acts as an intermediary between the oxide spacer layer and the magnetic layers. It provides a stable current pathway that enhances sensitivity and reproducing characteristics by ensuring uniform current distribution across the interface.
3Productivity
If the track width is narrowed to achieve high density recording, then the recording capacity increases, but the amplitude of magnetization and recording signal is lowered
Solution Approach 1:
The composite spacer layer structure with current confining paths generates a stronger magneto-resistance effect, which compensates for the reduced signal amplitude caused by narrower track widths. This enables high-density recording while maintaining adequate signal levels for accurate reproduction.
Solution Approach 2:
The patent changes the electrical and magnetic parameters of the spacer layer by using oxide materials with specific resistivity characteristics and combining them with metallic layers. This parameter optimization enhances the magneto-resistance effect, allowing detection of weaker signals from narrow tracks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution significantly enhances the MR ratio and sensitivity of the magneto-resistance effect element, leading to improved reproducing characteristics and stability, particularly in high-density recording applications.
Implementation Method 1
a functional layer containing at least one element selected from the group consisting of Si, Mg, B, and Al which is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer
Implementation Method 2
The stacking layer component structure exhibiting the change in resistance may be called as a 'spin dependent scattering unit'. The magnetization of one ferromagnetic layer (often called as a 'pinning layer' or 'fixed magnetization layer) is fixed by the magnetization of an anti-ferromagnetic layer and the magnetization of the other ferromagnetic layer (often called as a 'free layer' or 'free magnetization layer') is rotated in accordance with an external magnetic field.
Implementation Method 3
Recently, a GMR (Giant Magneto-Resistance effect) head with a high sensitive spin valve film using the GMR film is employed.
Implementation Method 4
a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof
Data Source
AI summary
A magneto-resistance effect element, including a fixed magnetization layer of which a magnetization is substantially fixed in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer, a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, a thin film layer, and a functional layer.